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ZXTN26070CV-7 PDF预览

ZXTN26070CV-7

更新时间: 2024-01-04 16:33:11
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
7页 138K
描述
70V NPN LOW SATURATION TRANSISTOR IN SOT-666

ZXTN26070CV-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:5.74最大集电极电流 (IC):2 A
集电极-发射极最大电压:70 V配置:SINGLE
最小直流电流增益 (hFE):75JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

ZXTN26070CV-7 数据手册

 浏览型号ZXTN26070CV-7的Datasheet PDF文件第1页浏览型号ZXTN26070CV-7的Datasheet PDF文件第2页浏览型号ZXTN26070CV-7的Datasheet PDF文件第3页浏览型号ZXTN26070CV-7的Datasheet PDF文件第5页浏览型号ZXTN26070CV-7的Datasheet PDF文件第6页浏览型号ZXTN26070CV-7的Datasheet PDF文件第7页 
A Product Line of  
Diodes Incorporated  
ZXTN26070CV  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 7)  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
IC = 100µA  
150  
70  
7
190  
80  
8.3  
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO, ICES  
IEBO  
IC = 10mA  
V
IE = 100µA  
100  
nA  
nA  
VCB = 60V , VCES = 60V  
VEB = 5.6V  
Emitter Cutoff Current  
100  
ON CHARACTERISTICS (Note 7)  
IC = 10mA, VCE = 5V  
IC = 100mA, VCE = 5V  
IC = 2A, VCE = 5V  
190  
200  
75  
320  
340  
110  
DC Current Gain  
hFE  
IC = 0.1A, IB = 10mA  
22  
30  
IC = 0.5A, IB = 10mA  
110  
147  
135  
265  
150  
200  
165  
330  
Collector-Emitter Saturation Voltage  
V
VCE(SAT)  
IC = 1A, IB = 50mA  
I
I
C = 1A, IB = 100mA  
C = 2A, IB = 200mA  
Base-Emitter Turn-On Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
0.85  
0.90  
1.0  
1.1  
V
V
VBE(ON)  
IC = 1A, VCE = 2V  
IC = 1A, IB = 50mA  
VBE(SAT)  
10  
pF  
Cobo  
fT  
VCB = 10V. f = 1MHz  
V
CE = 10V, IC = 50mA,  
Current Gain-Bandwidth Product  
200  
MHz  
f = 100MHz  
SWITCHING CHARACTERISTICS  
Turn-On Time  
46  
ns  
ns  
ton  
toff  
VCE = 10V, IC = 0.5A  
IB1 = -IB2 = 25mA  
Turn-Off Time  
722  
Notes:  
7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%  
4 of 7  
www.diodes.com  
April 2010  
© Diodes Incorporated  
ZXTN26070CV  
Document number: DS32129 Rev. 3 - 2  

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