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ZXTN26020DMF PDF预览

ZXTN26020DMF

更新时间: 2024-01-24 13:59:54
品牌 Logo 应用领域
美台 - DIODES 晶体双极型晶体管
页数 文件大小 规格书
6页 135K
描述
HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR

ZXTN26020DMF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DFN
包装说明:CHIP CARRIER, R-PBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:15 weeks风险等级:5.75
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PBCC-N3
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):260 MHzBase Number Matches:1

ZXTN26020DMF 数据手册

 浏览型号ZXTN26020DMF的Datasheet PDF文件第1页浏览型号ZXTN26020DMF的Datasheet PDF文件第3页浏览型号ZXTN26020DMF的Datasheet PDF文件第4页浏览型号ZXTN26020DMF的Datasheet PDF文件第5页浏览型号ZXTN26020DMF的Datasheet PDF文件第6页 
A Product Line of  
Diodes Incorporated  
ZXTN26020DMF  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
20  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current (Note 4)  
Peak Pulse Current  
20  
V
7
V
1.5  
4
A
A
ICM  
Base Current  
0.5  
A
IB  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
1
Unit  
W
Power Dissipation (Note 3)  
Power Dissipation (Note 4)  
380  
125  
mW  
PD  
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C  
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
°C/W  
°C/W  
°C  
Rθ  
Rθ  
JA  
330  
JA  
-55 to +150  
T
J, TSTG  
Notes:  
3. Device mounted on FR-4 PCB with 1inch square pads.  
4. Device mounted on FR-4 PCB with minimum recommended pad layout  
1.2  
1,000  
Single Pulse  
(t) = r(t) * R  
θJA  
R
1.0  
θ
JA  
R
= 328°C/W  
Note 3  
θJA  
100  
10  
1
T
- T = P * R (t)  
A θJA  
J
Duty Cycle, D = t /t  
1
2
0.8  
0.6  
0.4  
Note 4  
0.2  
0
0.1  
0.00001  
0
20  
40  
60  
80 100 120 140 160  
C)  
0.001  
0.1  
10  
1,000  
t1, PULSE DURATION TIME (s)  
TA, AMBIENT TEMPERATURE (  
°
Fig. 2 Single Pulse Maximum Power Dissipation  
Fig. 1 Power Dissipation vs. Ambient Temperature  
1
D = 0.7  
D = 0.5  
D = 0.3  
0.1  
D = 0.1  
D = 0.9  
D = 0.05  
D = 0.02  
R
(t) = r(t) * R  
θJA  
θ
JA  
R
= 328°C/W  
θ
JA  
0.01  
D = 0.01  
P(pk)  
T
t
1
D = 0.005  
t
2
- T = P * R (t)  
J
A
θJA  
Duty Cycle, D = t /t  
1
2
D = Single Pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1,000  
t1, PULSE DURATION TIME (s)  
Fig. 3 Transient Thermal Response  
ZXTN26020DMF  
Documnt Number: DS31953 Rev. 2 - 1  
2 of 6  
www.diodes.com  
September 2009  
© Diodes Incorporated  

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