ZXMN10B08E6

更新时间： 2024-02-10 11:10:30

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	198K
描述
100V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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ZXMN10B08E6 数据手册

ZXMN10B08E6

100V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

= 100V; R

= 0.230 I = 1.9A

DS(ON) D

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure

that combines the benefits of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage, power management

applications.

SOT23-6

FEATURES

•

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

SOT23-6 package

APPLICATIONS

•

DC - DC Converters

Power Management Functions

Disconnect switches

Motor control

PINOUT

ORDERING INFORMATION

DEVICE

REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN10B08E6TA

ZXMN10B08E6TC

7”

8mm

3000 units

13”

10000 units

DEVICE MARKING

Top View

•

10B8

ISSUE 1 - OCTOBER 2005

SEMICONDUCTORS

12 3 4 5 6 7

中文翻译

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ZXMN10B08E6TA	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10B08E6TC	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
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