Datasheet > ZXMN15A27K

ZXMN15A27K

更新时间： 2024-06-27 12:12:28

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
7页	809K
描述
TO-252

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中文翻译

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数据手册

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ZXMN15A27K 数据手册

ZXMN15A27K

N-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

 V_DS=150V,R_DS(ON)≤650mΩ@V_GS=10V,I_D=2.6A

 Low input capacitance

 Low on-resistance

 Fast switching speed

 High avalanche energy pulse withstand capability

 For Power Management Functions and SLIC line drivers for VoIP applications

 For Transformer Driving Switch and Motor control Applications

 For Uninterrupted power supply Applications

 Surface Mount device

TO-252

MECHANICAL DATA



Case: TO-252(DPAK)

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.33 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

Value

150

±25

Unit

V_GS

Gate-source voltage

TC = +25°C(Note2)

TC= +70°C(Note2)

TC = +25°C(Note1)

2.55

2.0

1.7

Continuous drain current, VGS = 10V

I_D

IDM

EAS

IAS

Pulsed drain current (VGS=10V,Note3)

Single Pulsed Avalanche Energy(Note6)

Single Pulsed Avalanche Current(Note6)

Repetitive Avalanche Energy(Note3)

Repetitive Avalanche Current(Note3)

Continuous Source current (Body diode)(Note2)

Pulsed Source current (Body diode)(Note3)

17.2

4.3

3.0

4.3

5.2

17.2

4.2

EAR

IAR

I_S

I_SM

Note1

Note2

Power dissipation

9.5

Note5

Note1

Note2

2.2

30.2

13.1

58.1

2.06

-55 ~+150

R_θJA

Thermal resistance from Junction to ambient

°C/W

Note5

R_θJL

Thermal Resistance, Junction to Lead (Note4)

Operating and Storage temperature

°C/W

°C

TJ,TSTG

Notes:1. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in

still air conditions; the device is measured when operating in a steady-state condition.

2. Same as note 1, except the device is measured at t ≤ 10 sec.

3. Same as note 1, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum

junction temperature.

4. Thermal resistance from junction to solder-point (at the end of the drain lead).

5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in

still air conditions; the device is measured when operating in a steady-state condition.

6. UIS in production with L = 5.95mH, IAS = 4.3A, RG = 25Ω, VDD = 100V, starting TJ = 25°C.

1 / 7

E-mail:hkt@heketai.com

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与ZXMN15A27K相关器件

型号	品牌	获取价格	描述	数据表
ZXMN15A27KTC	DIODES	获取价格	Power Field-Effect Transistor, 1.7A I(D), 150V, 0.65ohm, 1-Element, N-Channel, Silicon, Me
ZXMN2088DE6	ZETEX	获取价格	20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability
ZXMN2088DE6	DIODES	获取价格	20V Dual SOT23-6 N-channel enhancement mode MOSFET
ZXMN2088DE6TA	ZETEX	获取价格	20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability
ZXMN2088DE6TA	DIODES	获取价格	20V Dual SOT23-6 N-channel enhancement mode MOSFET
ZXMN20A28K	HOTTECH	获取价格	TO-252
ZXMN20B28K	DIODES	获取价格	MOSFETs optimised for Voice over Internet Protocol (VoIP)
ZXMN20B28KTC	DIODES	获取价格	200V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A01	ZETEX	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A01E6	ZETEX	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET

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