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ZVP4525ZTA PDF预览

ZVP4525ZTA

更新时间: 2024-11-30 07:42:43
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
9页 131K
描述
250V P-CHANNEL ENHANCEMENT MODE MOSFET

ZVP4525ZTA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-89
包装说明:SOT-89, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:1.04
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):0.205 A
最大漏极电流 (ID):0.205 A最大漏源导通电阻:14 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON

ZVP4525ZTA 数据手册

 浏览型号ZVP4525ZTA的Datasheet PDF文件第2页浏览型号ZVP4525ZTA的Datasheet PDF文件第3页浏览型号ZVP4525ZTA的Datasheet PDF文件第4页浏览型号ZVP4525ZTA的Datasheet PDF文件第5页浏览型号ZVP4525ZTA的Datasheet PDF文件第6页浏览型号ZVP4525ZTA的Datasheet PDF文件第7页 
ZVP4525Z  
250V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V
=-250V; R  
=14 ; I =-205mA  
DS(ON)  
(BR)DSS  
D
DESCRIPTION  
This 250V enhancement mode P-channel MOSFET provides users with a  
competitive specification offering efficient power handling capability, high  
impedance and is free from thermal runaway and thermally induced  
secondary breakdown. Applications benefiting from this device include a  
variety of Telecom and general high voltage switching circuits.  
SOT89  
SOT223 and SOT23-6 versions are also available.  
FEATURES  
High voltage  
Low on-resistance  
Fast switching speed  
Low gate drive  
Low threshold  
Complementary N-channel Type ZVN4525Z  
SOT89 package  
S
APPLICATIONS  
D
G
D
Earth Recall and dialling switches  
Electronic hook switches  
High Voltage Power MOSFET Drivers  
Telecom call routers  
Top View  
Solid state relays  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm) QUANTITY  
PER REEL  
ZVP4525ZTA  
ZVP4525ZTC  
7
12mm embossed  
12mm embossed  
1000 units  
4000 units  
13  
DEVICE MARKING  
P52  
ISSUE 2 - JUNE 2007  
SEMICONDUCTORS  
1

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