Datasheet > ZMY62

ZMY62

更新时间： 2025-09-19 03:52:35

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页数	文件大小	规格书
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描述
SILICON PLANAR POWER ZENER DIODES

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中文翻译

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数据手册

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ZMY62 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON PLANAR POWER ZENER DIODES

ZMY4.7 - ZMY100

LL-41 (MELF)

GLASS PACKAGE

For use in Stabilizing and Clipping Circuits with High Power Rating

Hermetically Sealed, Glass Silicon Diodes

Marking: With Cathode Band

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)

DESCRIPTION

SYMBOL

VALUE

UNIT

Power Dissipation

*P_D

1.3

Non Repetitive Peak Power Disspation,

t <10ms

P_zsm

5.0

T_j

Junction Temperature

175

°C

Storage Temperature Range

T_stg

- 55 to +175

°C

THERMAL CHARACTERISTICS

Junction to Ambient in free air

115.3

K/W

*R_{th (j-a)}

ELECTRICAL CHARACTERISTICS (T_a=25°C unless specified otherwise)

V_F<1.2V at 200mA

Temp. Coeff. of

Zener volt.

*Admissible

Zener Current

at I_Ztest

Device #

Dynamic

Resistance

at I_Ztest

Test

Current

Reverse

Voltage

**Zener Voltage

V_Zat I_ZT

(V)

at I_Ztest

(mA)

I_R= 0.5mA

f=1kHz

r_zj(W)

a V_Z10^-4/K

V_R(V)

(mA)

min

4.4

4.8

5.2

5.8

6.4

7.0

7.7

8.5

max

5.0

5.4

6.0

6.6

7.2

7.9

8.7

max

-7…..+4

-6…..+5

-3…..+5

-1…..+6

0…..7

ZMY4.7

ZMY5.1

ZMY5.6

ZMY6.2

ZMY6.8

ZMY7.5

ZMY8.2

ZMY9.1

ZMY10

ZMY11

ZMY12

ZMY13

ZMY15

ZMY16

ZMY18

ZMY20

ZMY22

ZMY24

ZMY27

ZMY30

ZMY33

ZMY36

100

>0.5

>0.7

>1.5

>2.0

>3.0

>5.0

>6.0

>7.0

>7.5

>8.5

>9.0

>10

>11

>12

>14

>15

>17

>18

>20

>22.5

>25

165

150

135

128

110

100

0…..7

+3…..+8

+5…..+9

+5…..+10

+7…..+11

+7…..+12

9.6

9.4

10.6

11.6

12.7

14.1

15.8

17.1

19.1

21.2

23.3

25.6

28.9

32.0

35.0

38.0

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

28.0

31.0

34.0

>27

*Valid provided that electrodes are kept at ambient temperature

**Pulse Condition : 20ms < tp <50ms

ZMY4.7_100V Rev081105E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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