ZHCS506TC

更新时间： 2024-02-19 00:45:31

品牌	Logo	应用领域
美台 - DIODES		整流二极管光电二极管
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3页	105K
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数据手册

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ZHCS506TC 数据手册

SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE “SuperBAT”

ZHCS506

ISSUE 1 - September 1997

✪

FEATURES:

•

Low V_F

•

High Current Capability

APPLICATIONS:

•

DC - DC converters

Mobile telecomms

PCMCIA

PARTMARK DETAIL: S56

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_R

VALUE

UNIT

Continuous Reverse Voltage

Forward Current (Continuous)

Forward Voltage @ I_F= 500mA

Average Peak Forward Current; D.C. = 50%

I_F

500

V_F

630

I_FAV

I_FSM

1000

5.5

2.5

Non Repetitive Forward Current t≤100µs

t≤10ms

Power Dissipation at T_amb= 25° C

Storage Temperature Range

Junction Temperature

P_tot

T_stg

T_j

330

-55 to + 150

125

° C

ELECTRICAL CHARACTERISTICS (at T

= 25° C unless otherwise stated).

amb

PARAMETER

SYMBOL

V_(BR)R

MIN.

TYP.

MAX. UNIT CONDITIONS.

Reverse Breakdown

Voltage

I_R= 200µA

Forward Voltage

V_F

275

320

415

550

680

820

310

360

470

630

800

960

I_F= 50mA*

I_F= 100mA*

I_F= 250mA*

I_F= 500mA*

I_F= 750mA*

I_F= 1000mA*

I_F= 1500mA*

I_F= 500mA, T_amb= 100° C*

1120 1350

565

Reverse Current

I_R

V_R= 45V

µA

Diode Capacitance

C_D

t_rr

f= 1MHz,V_R= 25V

switched from

I_F= 500mA to I_R

Measured at I_R

Reverse Recovery

Time

500mA

50mA

*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2%.

12 3

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