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ZHCS500TA PDF预览

ZHCS500TA

更新时间: 2024-01-14 19:36:34
品牌 Logo 应用领域
其他 - ETC 肖特基二极管光电二极管
页数 文件大小 规格书
3页 105K
描述
DIODE SCHOTTKY SOT-23

ZHCS500TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:MINIATURE PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.35配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

ZHCS500TA 数据手册

 浏览型号ZHCS500TA的Datasheet PDF文件第2页浏览型号ZHCS500TA的Datasheet PDF文件第3页 
SOT23 SILICON HIGH CURRENT  
SCHOTTKY BARRIER DIODE “SuperBAT”  
ZHCS500  
ISSUE 1- September 1997  
FEATURES:  
1
Low VF  
C
High Current Capability  
2
1
APPLICATIONS:  
DC - DC converters  
A
3
Mobile telecomms  
PCMCIA  
3
PARTMARK DETAIL: ZS5  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VR  
VALUE  
40  
UNIT  
V
Continuous Reverse Voltage  
Forward Current (Continuous)  
Forward Voltage @ IF = 500mA  
Average Peak Forward Current; D.C. = 50%  
IF  
500  
mA  
mV  
mA  
VF  
550  
IFAV  
IFSM  
1000  
6.75  
3
A
A
Non Repetitive Forward Current t100µs  
t10ms  
Power Dissipation at Tamb= 25° C  
Storage Temperature Range  
Junction Temperature  
Ptot  
Tstg  
Tj  
330  
-55 to + 150  
125  
mW  
° C  
° C  
ELECTRICAL CHARACTERISTICS (at T  
= 25° C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)R  
MIN.  
40  
TYP.  
MAX. UNIT CONDITIONS.  
Reverse Breakdown  
Voltage  
60  
V
IR= 200µA  
Forward Voltage  
VF  
270  
300  
370  
465  
550  
640  
810  
440  
300  
350  
460  
550  
670  
780  
1050  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
IF= 50mA*  
IF= 100mA*  
IF= 250mA*  
IF= 500mA*  
IF= 750mA*  
IF= 1000mA*  
IF= 1500mA*  
IF= 500mA, Tamb= 100° C*  
Reverse Current  
IR  
15  
40  
VR= 30V  
µA  
pF  
ns  
Diode Capacitance  
CD  
trr  
20  
10  
f= 1MHz,VR= 25V  
switched from  
IF = 500mA to IR  
Measured at IR  
Reverse Recovery  
Time  
=
500mA  
=
50mA  
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle 2%.  

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