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XX1004-BD-000W PDF预览

XX1004-BD-000W

更新时间: 2024-01-12 06:02:04
品牌 Logo 应用领域
MIMIX 射频和微波射频倍频器微波倍频器
页数 文件大小 规格书
6页 227K
描述
Converter,

XX1004-BD-000W 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.6
Base Number Matches:1

XX1004-BD-000W 数据手册

 浏览型号XX1004-BD-000W的Datasheet PDF文件第1页浏览型号XX1004-BD-000W的Datasheet PDF文件第2页浏览型号XX1004-BD-000W的Datasheet PDF文件第3页浏览型号XX1004-BD-000W的Datasheet PDF文件第5页浏览型号XX1004-BD-000W的Datasheet PDF文件第6页 
10.0-13.0/20.0-26.0 GHz GaAs MMIC  
Active Doubler  
February 2007 - Rev 16-Feb-07  
X1004-BD  
App Note [1] Biasing - It is recommended to separately bias each doubler stage Vd1 through Vd2 at Vd(1,2)=3.5V with Id1=20mA  
and Id2=50mA. Separate biasing is recommended if the doubler is to be used at high levels of saturation, where gate rectification  
will alter the effective gate control voltage. It is also recommended to use active biasing to keep the currents constant as the RF  
power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power  
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in  
series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current and  
thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.7V and Vg2=-0.2V.Typically the gate is protected with  
Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available  
before applying the positive drain supply.  
App Note [2] Bias Arrangement -  
For individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2 and Vg1, 2) needs to have DC bypass  
capacitance (~100-200 pf) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.  
MTTFTables  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Ho rs  
FITs  
Temperat re  
Temperat re  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
96.6 deg Celsius  
119.6 deg Celsius  
142.3 deg Celsius  
169.6° C/W  
181.9° C/W  
193.0° C/W  
2.75E+10  
1.95E+09  
1.91E+08  
3.64E-02  
5.13E-01  
5.24E+00  
Bias Conditions: Vd1=Vd2=3.5V, Id1=20 mA, Id2=50 mA  
Page 4 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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