XX1007-QT
Doubler
13.5-17.0/27.0-34.0 GHz
Rev. V1
Features
Functional Block Diagram
Integrated Gain, Doubler and Driver Stages
Single Positive Supply, +5V
Integrated Bypassing Capacitor
+20.0 dBm Output Saturated Power
35.0 dBc Fundamental Suppression
On-Chip ESD Protection
100% RF, DC and Output Power Testing
Lead-Free 3 mm 16-Lead QFN Package
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s 13.5-17.0 / 27.0-34.0 GHz GaAs
MMIC doubler integrates a gain stage, passive
doubler and driver amplifier onto a single device.
The XX1007-QT has a self-biased architecture
requiring a single positive supply (+5V) only and
integrated on-chip bypassing and DC blocking
capacitors eliminating the need for any external
components. This device uses M/A-COM Tech’s
GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure
high repeatability and uniformity. The XX1007-QT
has integrated ESD structures for protection and
comes in a low cost 3x3mm QFN package. The
device is well suited for Millimeter wave Point-to-
Point Radio, LMDS, SATCOM and VSAT
applications.
Pin Configuration
Pin No.
Function
Pin No.
Function
3
RF In
RF Out
Vd
1,2,4,5,6,7,8,9
11,12,14,15,16
NC
NC
10
13
Absolute Maximum Ratings
Parameter
Absolute Max.
+6.0 VDC
Supply Voltage (Vd)
Ordering Information
Supply Current (Id)
300 mA
Part Number
XX1007-QT-0G00
XX1007-QT-0G0T
XX1007-QT-EV1
Package
bulk quantity
tape and reel
evaluation board
Gate Bias Voltage (Vg)
Input Power (RF Pin)
+0.3 VDC
10 dBm
Storage Temperature (Tstg)
-65 to +165 ºC
Operating Temperature (Ta)
Channel Temperature (Tch)
-55 to MTTF Table1
MTTF Table1
(1) Channel temperature directly affects a device's MTTF. It is recom-
mended to keep channel temperature as low as possible to maximize
lifetime.
1
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