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XX1007-BD-000V

更新时间： 2024-01-23 10:20:19
品牌 Logo 应用领域
MIMIX 倍频器
页数 文件大小 规格书
6页 377K
描述
13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler

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XX1007-BD-000V 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.26
构造：COMPONENTJESD-609代码：e3
最大工作频率：17000 MHz最小工作频率：13500 MHz
最低工作温度：-55 °C射频/微波设备类型：FREQUENCY DOUBLER
端子面层：Matte Tin (Sn)Base Number Matches：1

XX1007-BD-000V 数据手册

 浏览型号XX1007-BD-000V的Datasheet PDF文件第2页浏览型号XX1007-BD-000V的Datasheet PDF文件第3页浏览型号XX1007-BD-000V的Datasheet PDF文件第4页浏览型号XX1007-BD-000V的Datasheet PDF文件第5页浏览型号XX1007-BD-000V的Datasheet PDF文件第6页 
13.5-17.0/27.0-34.0 GHz GaAs MMIC  
Active Doubler  
February 2008 - Rev 13-Feb-08  
X1007-BD  
Features  
Functional Block Diagram  
Integrated Gain, Doubler and Driver Stages  
Self-biased Architecture  
Vd  
+21.0 dBm Output Saturated Power  
40.0 dBc Fundamental Suppression  
On-Chip ESD Protection  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
RF IN  
RF OUT  
X2  
General Description  
Mimix Broadband’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC  
doubler integrates a gain stage, passive doubler and driver  
amplifier onto a single device. The XX1007-BD has a  
self-biased architecture requiring a single positive supply  
(+5V) only and integrated on-chip bypassing capacitor  
eliminating the need for external capacitor.This MMIC uses  
Mimix Broadband’s 0.15um GaAs PHEMT device model  
technology, and is based upon electron beam lithography  
to ensure high repeatability and uniformity. The chip has  
integrated ESD structures for protection and surface  
passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow either a  
conductive epoxy or eutectic solder die attach process.  
This device is well suited for Millimeter wave Point-to-Point  
Radio, LMDS, SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
+6.0 VDC  
300 mA  
+0.3 VDC  
TBD  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Input Frequency Range (fin)  
Output Frequency Range (fout)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Fundamental Level at the Output  
RF Input Power (RF Pin)  
Output Power at 5.0 dBm Pin (Pout)  
Drain Bias Voltage (Vd)  
Supply Current (Id1,2,3) (Vd=5.0V Typical)  
Units  
GHz  
GHz  
dB  
Min.  
13.5  
27.0  
-
-
-
-
-
-
-
Typ.  
-
-
-8.0  
-10.0  
-40.0  
5.0  
+21.0  
+5.0  
200  
Max.  
17.0  
34.0  
-
-
-
-
dB  
dBc  
dBm  
dBm  
VDC  
mA  
-
+5.5  
240  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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