Datasheet > XS3A1T5157GS

XS3A1T5157GS

更新时间： 2023-09-03 20:28:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
19页	285K
描述
Low-ohmic single-pole double-throw analog switchProduction

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XS3A1T5157GS 数据手册

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XS3A1T5157

Low-ohmic single-pole double-throw analog switch

Table 8. ON resistance

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Fig. 7 to Fig. 13.

Symbol Parameter Conditions T_amb= -40 °C to +85 °C T_amb= -40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

R_ON(peak)ON resistance V_I= GND to V_CC

;

(peak)

I_SW= 100 mA; see Fig. 6

V_CC= 1.4 V

1.6

1.0

3.7

1.6

4.1

1.7

0.9

V_CC= 1.65 V

V_CC= 2.3 V

0.55

0.5

0.8

V_CC= 2.7 V

0.75

V_CC= 4.3 V

0.5

ΔR_ON

ON resistance V_I= GND to V_CC

;

[2]

mismatch

between

channels

I_SW= 100 mA

V_CC= 1.4 V

V_CC= 1.65 V

V_CC= 2.3 V

V_CC= 2.7 V

V_CC= 4.3 V

0.04

0.02

0.3

0.2

0.3

0.1

0.08

0.075

R_ON(flat)ON resistance V_I= GND to V_CC

;

[3]

(flatness)

I_SW= 100 mA

V_CC= 1.4 V

V_CC= 1.65 V

V_CC= 2.3 V

V_CC= 2.7 V

V_CC= 4.3 V

1.0

0.5

3.3

1.2

0.3

0.4

3.6

1.3

0.15

0.13

0.2

0.35

0.45

[1] Typical values are measured at T_amb= 25 °C.

[2] Measured at identical V_CC, temperature and input voltage.

[3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V_CCand

temperature.

11.1. Test circuits and graphs

switch

or V

switch

GND

aaa-031202

V_I= 0.3 V or V_CC- 0.3 V; V_O= V_CC- 0.3 V or 0.3 V

Fig. 4. Test circuit for measuring OFF-state leakage current

XS3A1T5157

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 17 March 2020

6 / 19

1...3 4 567 8 9...19

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