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XP1015-BD-000V PDF预览

XP1015-BD-000V

更新时间： 2024-01-16 00:33:21
品牌 Logo 应用领域
MIMIX 放大器射频微波功率放大器
页数 文件大小 规格书
5页 228K
描述
43.5-46.5 GHz GaAs MMIC Power Amplifier

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XP1015-BD-000V 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：ObsoleteReach Compliance Code：compliant
风险等级：5.17Is Samacsys：N
构造：COMPONENT增益：13 dB
最大输入功率 (CW)：26 dBmJESD-609代码：e3
最大工作频率：46500 MHz最小工作频率：43500 MHz
最高工作温度：85 °C最低工作温度：-55 °C
射频/微波设备类型：WIDE BAND MEDIUM POWER端子面层：Matte Tin (Sn)
Base Number Matches：1

XP1015-BD-000V 数据手册

 浏览型号XP1015-BD-000V的Datasheet PDF文件第2页浏览型号XP1015-BD-000V的Datasheet PDF文件第3页浏览型号XP1015-BD-000V的Datasheet PDF文件第4页浏览型号XP1015-BD-000V的Datasheet PDF文件第5页 
43.5-46.5 GHz GaAs MMIC  
Power Amplifier  
August 2007 - Rev 10-Aug-07  
P1015-BD  
Features  
Chip Device Layout  
Excellent Saturated Output Stage  
Balanced Design Provides Good Input/Output Match  
13.0 dB Small Signal Gain  
+31.0 dBm P1dB Compression Point  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband's three stage balanced 43.5 - 46.5  
GHz GaAs MMIC power amplifier has a small signal  
gain of 13.0 dB with a +31.0 dBm P1dB output  
compression point.The device also includes Lange  
couplers to achieve good input and output return loss.  
This MMIC uses Mimix Broadband’s 0.15 µm GaAs  
PHEMT device model technology, and is based upon  
electron beam lithography to ensure high  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
945,945,1915 mA  
+0.3 VDC  
+26 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
repeatability and uniformity.The chip has surface  
passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow  
either a conductive epoxy or eutectic solder die attach  
process.This device is well suited for Millimeter-wave  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Units  
GHz  
dB  
dB  
dB  
Min.  
43.5  
-
-
-
-
-
-
Typ.  
-
Max.  
46.5  
-
-
-
-
-
-
+5.5  
0.0  
860  
860  
1740  
20.0  
20.0  
13.0  
+/-1.0  
45.0  
+31.0  
+5.0  
-0.5  
dB  
dB  
Reverse Isolation (S12)  
2
Output Power for 1dB Compression (P1dB)  
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1) (Vd=5.0V,Vg=-0.5V Typical)  
Supply Current (Id2) (Vd=5.0V,Vg=-0.5V Typical)  
Supply Current (Id3) (Vd=5.0V,Vg=-0.5V Typical)  
dBm  
VDC  
VDC  
mA  
mA  
mA  
-
-1.0  
-
-
-
720  
720  
1440  
(2) Measured using constant current.  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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