Datasheet > XN01117(XN1117)

XN01117(XN1117)

更新时间： 2024-02-08 16:43:34

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複合デバイス－複合トランジスタ

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数据手册

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XN01117(XN1117) 数据手册

Composite Transistors

XN01117 (XN1117)

Silicon PNP epitaxial planer transistor

Unit: mm

For switching/digital circuits

2.8^+0.2

1.5^+0.25

0.3

0.65 0.15

0.05

0.65 0.15

Features

Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

UNR1117(UN1117) × 2 elements

0.1 to 0.3

0.4 0.2

Absolute Maximum Ratings (Ta=25˚C)

1 : Collector (Tr1)

2 : Collector (Tr2)

3 : Base (Tr2)

4 : Emitter

5 : Base (Tr1)

EIAJ : SC–74A

Mini Type Pakage (5–pin)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Rating

–50

Marking Symbol: OL

Internal Connection

element

–100

˚C

P_T

300

Overall Junction temperature

Storage temperature

T_j

150

Tr1

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

–50

typ

max

Unit

Collector to base voltage

I_C= –10µA, I_E= 0

Collector to emitter voltage

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

I_C= –2mA, I_B= 0

V_CB= –50V, I_E= 0

V_CE= –50V, I_B= 0

V_EB= –6V, I_C= 0

– 0.1

– 0.5

– 0.01

460

µA

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Forward current transfer h_FEratio

V_CE= –10V, I_C= –5mA

160

0.5

h_FE(small/large)^*1V_CE= –10V, I_C= –5mA

0.99

Collector to emitter saturation voltage V_CE(sat)

I_C= –10mA, I_B= – 0.3mA

– 0.25

– 0.2

Output voltage high level

Output voltage low level

Transition frequency

V_OH

V_OL

f_T

V_CC= –5V, V_B= – 0.5V, R_L= 1kΩ

V_CC= –5V, V_B= –2.5V, R_L= 1kΩ

V_CB= –10V, I_E= 1mA, f = 200MHz

–4.9

MHz

kΩ

Input resistance

R₁

–30%

+30%

^*1Ratio between 2 elements

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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