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XN01110(XN1110) PDF预览

XN01110(XN1110)

更新时间: 2024-02-24 02:48:57
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 48K
描述
Composite Device - Composite Transistors

XN01110(XN1110) 数据手册

 浏览型号XN01110(XN1110)的Datasheet PDF文件第2页浏览型号XN01110(XN1110)的Datasheet PDF文件第3页 
Composite Transistors  
XN01110 (XN1110)  
Silicon PNP epitaxial planer transistor  
Unit: mm  
+0.20  
–0.05  
2.90  
For switching/digital circuits  
+0.10  
–0.06  
0.16  
1.9±0.1  
(0.95) (0.95)  
3
2
4
5
Features  
Two elements incorporated into one package.  
(Emitter-coupled transistors with built-in resistor)  
Reduction of the mounting area and assembly cost by one half.  
1
+0.10  
–0.05  
0.30  
10˚  
Basic Part Number of Element  
UNR1110(UN1110) × 2 elements  
Absolute Maximum Ratings (Ta=25˚C)  
1 : Collector (Tr1)  
2 : Collector (Tr2)  
3 : Base (Tr2)  
4 : Emitter  
5 : Base (Tr1)  
EIAJ : SC–74A  
Mini5-G1 Pakage  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
Rating  
of  
element  
–50  
V
Marking Symbol: AD  
Internal Connection  
–100  
mA  
mW  
˚C  
PT  
300  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tr1  
5
1
2
Tstg  
–55 to +150  
˚C  
4
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
Conditions  
min  
–50  
–50  
typ  
max  
Unit  
V
Collector to base voltage  
IC = –10µA, IE = 0  
Collector to emitter voltage  
VCEO  
ICBO  
ICEO  
IEBO  
hFE  
IC = –2mA, IB = 0  
VCB = –50V, IE = 0  
VCE = –50V, IB = 0  
VEB = –6V, IC = 0  
V
– 0.1  
– 0.5  
– 0.01  
460  
µA  
µA  
mA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Forward current transfer hFE ratio  
VCE = –10V, IC = –5mA  
160  
0.5  
hFE (small/large)*1 VCE = –10V, IC = –5mA  
0.99  
Collector to emitter saturation voltage VCE(sat)  
IC = –10mA, IB = – 0.3mA  
– 0.25  
– 0.2  
V
V
Output voltage high level  
Output voltage low level  
Transition frequency  
VOH  
VOL  
fT  
VCC = –5V, VB = – 0.5V, RL = 1kΩ  
VCC = –5V, VB = –2.5V, RL = 1kΩ  
VCB = –10V, IE = 1mA, f = 200MHz  
–4.9  
V
80  
47  
MHz  
kΩ  
Input resistance  
R1  
–30%  
+30%  
*1 Ratio between 2 elements  
Note) The Part number in the Parenthesis shows conventional part number.  
1

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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-74A