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XD03CJ0472FT5

更新时间: 2024-11-22 04:28:19
品牌 Logo 应用领域
京瓷/艾维克斯 - KYOCERA AVX /
页数 文件大小 规格书
1页 50K
描述
Data Line Filter, 1 Function(s), 500V,

XD03CJ0472FT5 数据手册

  
Filtered Arrays  
XD... Type  
FEATURES  
To be used beneath a connector  
• Provide an EMI filtered signal line between electronic modules  
• Effective insertion loss from 1MHz up to ~ 1GHz  
• Surface mount compatible  
HOW TO ORDER  
XD  
06  
Z
F
0153  
K
--  
AVX Style  
Size  
03  
06  
Class  
C = NP0  
Z = X7R  
Voltage  
F = 200  
J = 500  
Capacitance  
EIA code  
on 3 or 4  
digits  
Tolerance  
Packaging  
SUFFIX  
Burn-in 100ꢀ 168H = T5  
Burn-in 100ꢀ 48H = T3  
XD  
NP0  
F = 1ꢀ  
G = 2ꢀ  
J = 5ꢀ  
07  
K = 10ꢀ  
J = 5ꢀ  
No burn-in  
= --  
X7R  
K = 10ꢀ  
M = 20ꢀ  
STYLE & DIMENSIONS  
millimeters (inches)  
L
Thickness  
TYPES  
L
P
D
d
bm maxi  
maxi  
P
D
XD07  
7.00 0.15  
(0.275 0.006)  
6.00 0.15  
(0.236 0.006)  
2.54  
1.70 0.15  
1.00 0.10  
0.3  
2mm  
(4 capacitors)  
(0.100) (0.067 0.006) (0.039 0.0039)  
2.54 1.70 0.15 1.00 0.10  
(0.100) (0.067 0.006) (0.039 0.0039)  
2.54 1.70 0.15 1.0 0.10  
L
P
XD06  
(4 capacitors)  
0.3  
2mm  
d
XD03  
6.00 x 3.00 0.15  
0.3  
1.5mm  
bm  
tm  
(2 capacitors) (0.236 x 0.118 0.006)  
(0.100) (0.067 0.006) (0.039 0.0039)  
Terminations: Silver – Palladium – Platinum, on 4 or only 2 sides of the array  
CAPACITANCE vs VOLTAGE TABLE  
Cap. Range  
(each cap.)  
X7R  
NP0  
200VDC  
500VDC  
200VDC  
500VDC  
XD07...  
XD06...  
XD03...  
33nF 120nF  
15nF 68nF  
8.2nF 39nF  
4.7nF 18nF  
2.2nF 10nF  
1nF 4.7nF  
470pF 1500pF  
220pF 750pF  
180pF 390pF  
220pF 620pF  
120pF 330pF  
82pF 180pF  
ELECTRICAL CHARACTERISTICS  
Dielectric Class  
X7R  
NP0  
0
Temperature Coefficient  
C/C 15ꢀ (-55 +125°C)  
30ppm/°C  
Climatic Category  
55 / 125 / 56  
55 / 125 / 56  
Rated Voltage (UR)  
Test Voltage (Ue)  
Tangent of Loss Angle - DF  
Insulation Resistance  
200 VDC  
2 x UR  
500VDC  
1.5 x UR  
200VDC  
2 x UR  
500VDC  
1.5 x UR  
tg δ 250(10-4)  
tg δ 15(10-4)  
C 10nF = Ri 100 GΩ  
Ri 100 GΩ  
C > 10nF = Ri x C 1000s  
103  

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