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XC74UL02AAN PDF预览

XC74UL02AAN

更新时间: 2024-11-26 19:01:55
品牌 Logo 应用领域
特瑞仕 - TOREX 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
3页 98K
描述
NOR Gate, CMOS, PDSO6,

XC74UL02AAN 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSSOP, TSSOP6,.08Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.36
JESD-30 代码:R-PDSO-G6负载电容(CL):50 pF
逻辑集成电路类型:NOR GATE最大I(ol):0.00005 A
湿度敏感等级:1端子数量:6
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP6,.08封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH电源:2/5.5 V
Prop。Delay @ Nom-Sup:13 ns认证状态:Not Qualified
施密特触发器:NO子类别:Gates
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.635 mm端子位置:DUAL
Base Number Matches:1

XC74UL02AAN 数据手册

 浏览型号XC74UL02AAN的Datasheet PDF文件第2页浏览型号XC74UL02AAN的Datasheet PDF文件第3页 
13S_32XC74UL(02AAN) 02.09.12 16:09 ページ 975  
CMOS Logic  
CMOS 2-Input NOR Gate  
■Applications  
Palmtops  
High Speed Operation  
: tpd=2.65ns TYP  
Digital Equipment  
Operating Voltage Range : 2V~5.5V  
Low Power Consumption : 1µA (max)  
■General Description  
■Features  
The XC74UL02AA is a 2-input CMOS NOR gate, manufactured using  
silicon gate CMOS fabrication.  
High Speed Operation  
: tpd=2.65ns TYP  
Operating Voltage Range: 2V~5.5V  
Low Power Consumption: 1µA (max)  
Ultra Small Package  
CMOS low power circuit operation makes high speed LS-TTL operations  
achievable.  
: SSOT-25 and SOT-25  
With a wave forming buffer connected internally, stabilized output can be  
achieved as the circuit offers high noise immunity.  
As the XC74UL02AA is integrated into mini molded, SSOT-25 and SOT-  
25 packages, high density mounting is possible.  
■Pin Configuration  
■Function  
INPUT  
OUTPUT  
A
L
L
H
H
B
L
H
L
Y
H
H
H
L
B
A
Vcc  
1
2
3
5
4
H
H=High level, L=Low level  
GND  
Y
SSOT-25/SOT-25�  
(TOP VIEW)�  
■Absolute Maximum Ratings  
Ta=  
-
40°C~85°C  
PARAMETER  
SYMBOL  
CC  
IN  
OUT  
IK  
OK  
OUT  
RATINGS  
UNITS  
Power Supply Voltage  
Input Voltage  
V
-0.5 ~ +6.0  
V
V
13  
V
-0.5 ~ +6.0  
Output Voltage  
V
-0.5 ~ VCC +0.5  
V
Input Diode Current  
Output Diode Current  
Output Current  
I
-20  
20  
25  
mA  
mA  
mA  
I
I
V
CC ,GND Current  
I
CC, IGND  
50  
150  
mA  
mW  
°C  
Continuous Total  
Power Dissipation (Ta=55°C)  
Pd  
Storage Temperature  
Tstg  
-65 ~ +150  
Note: Voltage is all Ground standardized.  
975  

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