XB1008-BD
Buffer Amplifier
10.0-21.0 GHz
Rev. V1
Mechanical Drawing
0.355
0.955
(0.014)
(0.038)
1.100
(0.043)
2
3
0.310
(0.012)
0.310
(0.012)
1
4
5
0.0
0.560
(0.022)
1.100
(0.043)
0.0
(Note:Engineering designator is15MPA0857)
Units:millimeters(inches)Bond pad dimensionsareshown to center of bond pad.
Thickness:0.110 +/- 0.010 (0.0043 +/- 0.0004),Backsideisground,Bond Pad/BacksideMetallization:Gold
All DCBond Pads(except Vd3)are0.100 x 0.100 (0.004 x 0.004).All RFBond Pads(and Vd3)are0.100 x 0.200 (0.004 x 0.008)
Bond pad centersareapproximately 0.109(0.004)from theedgeof thechip.
Dicing tolerance:+/- 0.005(+/- 0.0002).Approximateweight:0.75 mg.
Bond Pad #1(RFIn)
Bond Pad #2(Vg1)
Bond Pad #3 (Vd)
Bond Pad #4 (RFOut)
Bond Pad #5 (Vg2)
Bias Arrangement
Vd
Vg1
Bypass Capacitors - See App Note [2]
2
3
RF In
1
RF Out
4
5
Vg2
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
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