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XA95144XL-15CSG144I PDF预览

XA95144XL-15CSG144I

更新时间: 2024-01-01 08:57:41
品牌 Logo 应用领域
赛灵思 - XILINX 输入元件可编程逻辑
页数 文件大小 规格书
11页 234K
描述
Flash PLD, 15.5ns, CMOS, PBGA144, CSP-144

XA95144XL-15CSG144I 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:BGA包装说明:BGA,
针数:144Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.55JESD-30 代码:S-PBGA-B144
JESD-609代码:e1长度:12 mm
湿度敏感等级:3专用输入次数:
I/O 线路数量:117端子数量:144
最高工作温度:85 °C最低工作温度:-40 °C
组织:0 DEDICATED INPUTS, 117 I/O输出函数:MACROCELL
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:SQUARE封装形式:GRID ARRAY
峰值回流温度(摄氏度):260可编程逻辑类型:FLASH PLD
传播延迟:15.5 ns认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压:3.6 V
最小供电电压:3 V标称供电电压:3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:12 mmBase Number Matches:1

XA95144XL-15CSG144I 数据手册

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R
XA95144XL Automotive CPLD  
(1,3)  
Absolute Maximum Ratings  
Symbol  
Description  
Value  
–0.5 to 4.0  
–0.5 to 5.5  
–0.5 to 5.5  
–65 to +150  
+125  
Units  
V
VCC  
VIN  
Supply voltage relative to GND  
Input voltage relative to GND(2)  
Voltage applied to 3-state output(2)  
Storage temperature (ambient)(4)  
Junction temperature  
V
VTS  
TSTG  
TJ  
V
oC  
oC  
Notes:  
1. All automotive customers are required to set the Macrocell Power Setting to low, and set Logic Optimization to density.  
2. Maximum DC undershoot below GND must be limited to either 0.5V or 10 mA, whichever is easier to achieve. During transitions, the  
device pins may undershoot to –2.0 V or overshoot to +7.0V, provided this over- or undershoot lasts less than 10 ns and with the  
forcing current being limited to 200 mA. External I/O voltage may not exceed VCCINT by 4.0V.  
3. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress  
ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions  
is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time may affect device reliability.  
4. For soldering guidelines and thermal considerations, see the Device Packaging information on the Xilinx website. For Pb-free  
packages, see XAPP427.  
Recommended Operation Conditions  
Symbol  
TA  
Parameter  
Min  
–40  
3.0  
3.0  
2.3  
0
Max  
+85  
3.6  
Units  
oC  
V
Ambient temperature  
VCCINT  
Supply voltage for internal logic and input buffers  
Supply voltage for output drivers for 3.3V operation  
Supply voltage for output drivers for 2.5V operation  
Low-level input voltage  
3.6  
V
VCCIO  
2.7  
V
VIL  
VIH  
VO  
0.80  
5.5  
V
High-level input voltage  
2.0  
0
V
Output voltage  
VCCIO  
V
Quality and Reliability Characteristics  
Symbol  
Parameter  
Min  
20  
Max  
Units  
TDR  
Data Retention  
-
-
-
Years  
Cycles  
Volts  
NPE  
Program/Erase Cycles (Endurance) @ TA = 70°  
Electrostatic Discharge (ESD)  
10,000  
2,000  
VESD  
DC Characteristic Over Recommended Operating Conditions  
Symbol  
Parameter  
Test Conditions  
IOH = –4.0 mA  
OH = –500 μA  
IOL = 8.0 mA  
OL = 500 μA  
Min  
Max  
Units  
V
Output high voltage for 3.3V outputs  
Output high voltage for 2.5V outputs  
Output low voltage for 3.3V outputs  
Output low voltage for 2.5V outputs  
Input leakage current  
2.4  
-
VOH  
I
90% VCCIO  
-
V
-
-
-
-
0.4  
0.4  
±10  
±10  
V
VOL  
I
V
IIL  
VCC = Max; VIN = GND or VCC  
VCC = Max; VIN = GND or VCC  
μA  
μA  
IIH  
I/O high-Z leakage current  
DS600 (v1.1) April 3, 2007  
www.xilinx.com  
3
Product Specification  

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