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X4163S8I-2.7A PDF预览

X4163S8I-2.7A

更新时间： 2024-02-15 03:32:22
品牌 Logo 应用领域
瑞萨 - RENESAS 光电二极管
页数 文件大小 规格书
22页 924K
描述
1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8, PLASTIC, SOIC-8

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X4163S8I-2.7A 技术参数

是否Rohs认证：不符合生命周期：Transferred
包装说明：PLASTIC, SOIC-8Reach Compliance Code：unknown
风险等级：5.76Is Samacsys：N
可调阈值：YES模拟集成电路 - 其他类型：POWER SUPPLY MANAGEMENT CIRCUIT
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
长度：4.89 mm信道数量：1
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified座面最大高度：1.75 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：3.9 mmBase Number Matches：1

X4163S8I-2.7A 数据手册

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X4163, X4165  
ABSOLUTE MAXIMUM RATINGS  
COMMENT  
Temperature under bias ................... -65°C to+135°C  
Storage temperature ........................ -65°C to+150°C  
Voltage on any pin with respect to VSS... -1.0V to +7V  
D.C. output current...............................................5mA  
Lead temperature (soldering, 10s) .................... 300°C  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
This is a stress rating only; functional operation of the  
device (at these or any other conditions above those  
listed in the operational sections of this specification) is  
not implied. Exposure to absolute maximum rating condi-  
tions for extended periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS  
Temperature  
Commercial  
Industrial  
Min.  
0°C  
Max.  
70°C  
Option  
Supply Voltage Limits  
2.7V to 5.5V  
-2.7 and -2.7A  
Blank and -4.5A  
-40°C  
+85°C  
4.5V to 5.5V  
D.C. OPERATING CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.)  
V
= 2.7 to 5.5V  
CC  
Symbol  
Parameter  
Min  
Max  
1.0  
3.0  
1
Unit  
mA  
mA  
µA  
Test Conditions  
(1)  
ICC1  
Active Supply Current Read  
Active Supply Current Write  
Standby Current DC (WDT off)  
VIL = VCC x 0.1, VIH = VCC x 0.9  
fSCL = 400kHz, SDA = Commands  
(1)  
ICC2  
(2)  
ISB  
VSDA = VSCL = VSB  
Others = GND or VSB  
(2)  
ISB  
Standby Current DC (WDT on)  
20  
µA  
VSDA=VSCL=VSB  
Others = GND or VSB  
ILI  
Input Leakage Current  
Output Leakage Current  
10  
10  
µA  
µA  
VIN = GND to VCC  
ILO  
VSDA = GND to VCC  
Device is in Standby(2)  
(3)  
VIL  
Input LOW Voltage  
Input nonvolatile  
-0.5  
VCC x 0.3  
V
V
(3)  
VIH  
VCC x 0.7  
VCC + 0.5  
VHYS  
Schmitt Trigger Input Hysteresis  
Fixed input level  
0.2  
V
V
VCC related level .05 x VCC  
VOL  
Output LOW Voltage  
0.4  
V
IOL = 3.0mA (2.7- 5.5V)  
Notes: (1) The device enters the Active state after any start, and remains active until: 9 clock cycles later if the Device Select Bits in the Slave  
Address Byte are incorrect; 200ns after a stop ending a read operation; or tWC after a stop ending a write operation.  
(2) The device goes into Standby: 200ns after any stop, except those that initiate a nonvolatile write cycle; tWC after a stop that initiates a  
nonvolatile cycle; or 9 clock cycles after any start that is not followed by the correct Device Select Bits in the Slave Address Byte.  
(3) VIL Min. and VIH Max. are for reference only and are not tested.  
FN8120 Rev 2.00  
November 26, 2007  
Page 16 of 22  
1...13141516171819...22

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