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X28C512J-15T2 PDF预览

X28C512J-15T2

更新时间: 2024-10-03 14:25:07
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
21页 456K
描述
64KX8 EEPROM 5V, 150ns, PQCC32, PLASTIC, LCC-32

X28C512J-15T2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:QCCJ,
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.69最长访问时间:150 ns
其他特性:100000 ENDURANCE CYCLES; 10 YEARS DATA RETENTION; 128-BYTE PAGE数据保留时间-最小值:10
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:524288 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.56 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
宽度:11.43 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

X28C512J-15T2 数据手册

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X28C512, X28C513  
®
Data Sheet  
June 7, 2006  
FN8106.2  
5V, Byte Alterable EEPROM  
Features  
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated  
with Intersil’s proprietary, high performance, floating gate  
CMOS technology. Like all Intersil programmable nonvolatile  
memories, the X28C512, X28C513 are 5V only devices. The  
X28C512, X28C513 feature the JEDEC approved pin out for  
byte wide memories, compatible with industry standard  
EPROMS.  
• Access Time: 90ns  
• Simple Byte and Page Write  
- Single 5V supply  
• No external high voltages or V control circuits  
PP  
- Self-timed  
• No erase before write  
• No complex programming algorithms  
• No overerase problem  
The X28C512, X28C513 support a 128-byte page write  
operation, effectively providing a 39µs/byte write cycle and  
enabling the entire memory to be written in less than 2.5  
seconds. The X28C512, X28C513 also feature DATA Polling  
and Toggle Bit Polling, system software support schemes  
used to indicate the early completion of a write cycle. In  
addition, the X28C512, X28C513 support the software data  
protection option.  
• Low Power CMOS  
- Active: 50mA  
- Standby: 500µA  
• Software Data Protection  
- Protects data against system level inadvertent writes  
• High Speed Page Write Capability  
• Highly Reliable Direct Write Cell  
- Endurance: 100,000 write cycles  
- Data retention: 100 years  
- Early end of write detection  
- DATA polling  
- Toggle bit polling  
• Two PLCC and LCC Pinouts  
- X28C512  
• X28C010 EPROM pin compatible  
- X28C513  
• Compatible with lower density EEPROMs  
• Pb-Free Plus Anneal Available (RoHS Compliant)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2005, 2006. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  

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