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X25057MI-2.7 PDF预览

X25057MI-2.7

更新时间: 2024-01-31 07:21:01
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
14页 363K
描述
512X8 SPI BUS SERIAL EEPROM, PDSO8, MSOP-8

X25057MI-2.7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:MSOP-8Reach Compliance Code:unknown
风险等级:5.89Is Samacsys:N
其他特性:1 MILLION/BYTE ENDURANCE CYCLES; 100 YEARS DATA RETENTION最大时钟频率 (fCLK):5 MHz
数据保留时间-最小值:100耐久性:100000 Write/Erase Cycles
JESD-30 代码:S-PDSO-G8JESD-609代码:e0
长度:3 mm内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:8字数:512 words
字数代码:512工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512X8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.19封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/5 V
认证状态:Not Qualified座面最大高度:1.1 mm
串行总线类型:SPI最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

X25057MI-2.7 数据手册

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Recommended System Management  
Alternative: X5043  
4K  
512 x 8 Bit  
X25057  
5MHz Low Power SPI Serial EEPROM with IDLockMemory  
FEATURES  
DESCRIPTION  
• 5MHz clock rate  
• IDLock memory  
—IDLock first or last page, any 1/4 or lower 1/2 of  
EEPROM array  
• Low power CMOS  
—<1µA standby current  
—<3mA active current during write  
—<400µA active current during read  
• 2.7V-5.5V operation  
The X25057 is a CMOS 4Kbit serial EEPROM, inter-  
nally organized as 512 x 8. The X25057 features a  
Serial Peripheral Interface (SPI) and software protocol,  
allowing operation on a simple four-wire bus. The bus  
signals are a clock input (SCK) plus separate data in  
(SI) and data out (SO) lines. Access to the device is  
controlled through a chip select (CS) input, allowing  
any number of devices to share the same bus.  
IDLock is a programmable locking mechanism which  
allows the user to lock system ID and parametric data  
in different portions of the EEPROM memory space,  
ranging from as little as one page to as much as 1/2 of  
the total array. The X25057 also features a WP pin that  
can be used for hardwire protection of the part, dis-  
abling all write attempts, as well as a Write Enable  
Latch that must be set before a write operation can be  
initiated.  
• Built-in inadvertent write protection  
Power-up/power-down protection circuitry  
—Write enable latch  
—Write protect pin  
• SPI modes (0,0 & 1,1)  
• 512 x 8 bits  
—16-byte page mode  
• Self-timed write cycle  
—5ms write cycle time (typical)  
• High reliability  
—Endurance: 1 million cycles/byte  
—Data retention: 100 years  
—ESD: 2000V on all pins  
• 8-lead MSOP package  
• 8-lead TSSOP package  
The X25057 utilizes Xicor’s proprietary Direct Writecell,  
providing a minimum endurance of 1,000,000 cycles per  
byte and a minimum data retention of 100 years.  
BLOCK DIAGRAM  
Data Register  
SI  
Y Decode Logic  
SO  
16  
8
Command  
Decode  
and  
Control  
Logic  
X
32  
SCK  
Decode  
Logic  
4K EEPROM  
Array  
(512 x 8)  
CS  
High Voltage  
Control  
Write Control  
Logic  
WP  
Characteristics subject to change without notice. 1 of 14  
REV 1.2 11/28/00  
www.xicor.com  

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