是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | 0.600 INCH, CERDIP-24 |
针数: | 24 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.61 |
风险等级: | 5.72 | Is Samacsys: | N |
最长访问时间: | 35 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-GDIP-T24 | JESD-609代码: | e0 |
长度: | 32.135 mm | 内存密度: | 32768 bit |
内存集成电路类型: | UVPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 24 |
字数: | 4096 words | 字数代码: | 4000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 4KX8 | |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | WDIP | 封装等效代码: | DIP24,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE, WINDOW |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 5.72 mm |
最大待机电流: | 0.03 A | 子类别: | EPROMs |
最大压摆率: | 0.04 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WS57C43C-35J | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-35JI | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-35S | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-35T | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-35TMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-45 | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-45D | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-45J | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-45JI | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
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WS57C43C-45S | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
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