WS57C128FB
HIGH SPEED 16K x 8 CMOS EPROM
KEY FEATURES
• Very Fast Access Time
• Standard EPROM Pinout
• DIP and Surface Mount Packaging
Available
— 35 ns
• Low Power Consumption
• EPI Processing
— Latch-up Immunity Up to 200 mA
GENERAL DESCRIPTION
The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming
only 90 mA.
Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal
solution for applications which require fast access times, low power, and non-volatility. Typical applications include
systems which do not utilize mass storage devices and/or are board space limited.
The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both
J-leaded and leadless surface mount packages.
MODE SELECTION
PIN CONFIGURATION
PINS
PGM
CE
OE
V
V
OUTPUTS
CC
TOP VIEW
PP
MODE
Chip Carrier
CERDIP
Read
X
X
X
V
V
V
V
D
IL
IL
CC
CC
CC
CC
OUT
Output
Disable
X
V
V
V
V
High Z
High Z
1
28
V
V
CC
IH
CC
PP
2
27
26
25
24
23
22
21
20
19
18
17
16
15
A
PGM
12
4
3
2
30
32 31
1
3
A
A
A
A
A
A
A
A
A
A
A
A
7
6
5
4
3
2
1
0
0
1
2
13
5
29
Standby
Program
V
X
V
V
6
5
4
3
2
1
0
8
IH
CC
CC
4
A
A
A
A
A
A
A
A
8
6
28
27
26
25
24
23
22
21
9
5
A
9
V
V
V
V
D
7
IL
IL
IH
PP
PP
IN
11
6
A
11
NC
OE
8
7
OE
Program
Verify
9
V
V
V
V
V
D
IH
IL
IL
CC
OUT
8
A
10
A
10
11
12
13
10
9
CE
CE
10
11
12
13
14
O
Program
Inhibit
7
NC
O
7
X
V
X
V
V
CC
High Z
IH
PP
O
O
O
O
6
O
0
O
6
O
5
14 15 16
18
20
17
19
O
O
4
X can be V or V
.
IL IH
O
GND
3
O
O
NC O
O
4 5
1
2
3
PRODUCT SELECTION GUIDE
PARAMETER
WS57C128FB-35 WS57C128FB-45 WS57C128FB-55 WS57C128FB-70
Address Access Time (Max)
Chip Select Time (Max)
Output Enable Time (Max)
35 ns
35 ns
20 ns
45 ns
45 ns
25 ns
55 ns
55 ns
25 ns
70 ns
70 ns
25 ns
3-7
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