生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | 0.600 INCH, CERDIP-24 | 针数: | 24 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.61 | 风险等级: | 5.29 |
最长访问时间: | 35 ns | JESD-30 代码: | R-GDIP-T24 |
长度: | 32.135 mm | 内存密度: | 16384 bit |
内存集成电路类型: | UVPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 24 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 2KX8 |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | WDIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE, WINDOW |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
筛选级别: | MIL-STD-883 Class B | 座面最大高度: | 5.72 mm |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 15.24 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WS57C191C-35J | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-35P | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-45 | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-45D | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-45DI | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-45DMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-45J | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-45P | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-55 | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM | |
WS57C191C-55D | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 2K x 8 CMOS PROM/RPROM |