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WS57C128FB-45L PDF预览

WS57C128FB-45L

更新时间： 2024-01-14 01:34:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
5页 51K
描述
HIGH SPEED 16K x 8 CMOS EPROM

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中文翻译

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WS57C128FB-45L 数据手册

 浏览型号WS57C128FB-45L的Datasheet PDF文件第2页浏览型号WS57C128FB-45L的Datasheet PDF文件第3页浏览型号WS57C128FB-45L的Datasheet PDF文件第4页浏览型号WS57C128FB-45L的Datasheet PDF文件第5页 
WS57C128FB  
HIGH SPEED 16K x 8 CMOS EPROM  
KEY FEATURES  
• Very Fast Access Time  
• Standard EPROM Pinout  
• DIP and Surface Mount Packaging  
Available  
— 35 ns  
• Low Power Consumption  
• EPI Processing  
— Latch-up Immunity Up to 200 mA  
GENERAL DESCRIPTION  
The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is  
manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming  
only 90 mA.  
Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal  
solution for applications which require fast access times, low power, and non-volatility. Typical applications include  
systems which do not utilize mass storage devices and/or are board space limited.  
The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems  
which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both  
J-leaded and leadless surface mount packages.  
MODE SELECTION  
PIN CONFIGURATION  
PINS  
PGM  
CE  
OE  
V
V
OUTPUTS  
CC  
TOP VIEW  
PP  
MODE  
Chip Carrier  
CERDIP  
Read  
X
X
X
V
V
V
V
D
IL  
IL  
CC  
CC  
CC  
CC  
OUT  
Output  
Disable  
X
V
V
V
V
High Z  
High Z  
1
28  
V
V
CC  
IH  
CC  
PP  
2
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A
PGM  
12  
4
3
2
30  
32 31  
1
3
A
A
A
A
A
A
A
A
A
A
A
A
7
6
5
4
3
2
1
0
0
1
2
13  
5
29  
Standby  
Program  
V
X
V
V
6
5
4
3
2
1
0
8
IH  
CC  
CC  
4
A
A
A
A
A
A
A
A
8
6
28  
27  
26  
25  
24  
23  
22  
21  
9
5
A
9
V
V
V
V
D
7
IL  
IL  
IH  
PP  
PP  
IN  
11  
6
A
11  
NC  
OE  
8
7
OE  
Program  
Verify  
9
V
V
V
V
V
D
IH  
IL  
IL  
CC  
OUT  
8
A
10  
A
10  
11  
12  
13  
10  
9
CE  
CE  
10  
11  
12  
13  
14  
O
Program  
Inhibit  
7
NC  
O
7
X
V
X
V
V
CC  
High Z  
IH  
PP  
O
O
O
O
6
O
0
O
6
O
5
14 15 16  
18  
20  
17  
19  
O
O
4
X can be V or V  
.
IL IH  
O
GND  
3
O
O
NC O  
O
4 5  
1
2
3
PRODUCT SELECTION GUIDE  
PARAMETER  
WS57C128FB-35 WS57C128FB-45 WS57C128FB-55 WS57C128FB-70  
Address Access Time (Max)  
Chip Select Time (Max)  
Output Enable Time (Max)  
35 ns  
35 ns  
20 ns  
45 ns  
45 ns  
25 ns  
55 ns  
55 ns  
25 ns  
70 ns  
70 ns  
25 ns  
3-7  
12345

中文翻译

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