Datasheet > 存储 > SRAM> WS1M8-20FIA

WS1M8-20FIA

更新时间： 2024-02-28 10:50:07

品牌	Logo	应用领域
WEDC		静态存储器
页数	文件大小	规格书
6页	362K
描述
2x512Kx8 DUALITHICTM SRAM

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WS1M8-20FIA 数据手册

WS1M8-XXX

White Electronic Designs

2x512Kx8 DUALITHIC™ SRAM

FEATURES

ꢀ

Access Times 17, 20, 25, 35, 45, 55ns

Revolutionary, Center Power/Ground Pinout

Packaging:

ꢀ

Organized as two banks of 512Kx8

Commercial, Industrial and Military Temperature Ranges

5 Volt Power Supply

Low Power CMOS

TTL Compatible Inputs and Outputs

• 32 pin, Hermetic Ceramic DIP (Package 300)

• 36 lead Ceramic SOJ (Package 100)

• 36 lead Ceramic Flatpack (Package 226)

PIN CONFIGURATION FOR WS1M8-XDJX

AND WS1M8-XFX

PIN CONFIGURATION FOR WS1M8-XCX

36 CSOJ

32 DIP

TOP VIEW

36 FLATPACK

TOP VIEW

A18

A16

A14

A12

V^CC

CS1#

I/O0

I/O1

31 A15

30 A17

29 WE#

28 A13

27 A8

A18

A17

A16

A15

OE#

I/O7

I/O6

GND

26 A9

25 A11

24 CS2#

23 A10

22 CS1#

21 I/O7

20 I/O6

19 I/O5

18 I/O4

17 I/O3

GND

I/O2

I/O3

WE#

VCC

I/O5

I/O4

A14

A13

A12

A11

I/O0

I/O1

I/O2

GND

A10

CS2#

Pin Description

A0-18

I/O0-7

CS1-2#

OE#

Address Inputs

A0-18

I/O0-7

Address Inputs

Data Input/Output

Chip Selects

Output Enable

Write Enable

+5.0V Power

Ground

Data Input/Output

CS1-2#

WE#

V_CC

Chip Selects

Write Enable

+5.0V Power

Ground

WE#

V_CC

GND

Block Diagram

I/O0-7

WE#

OE#

A0-18

WE#

A0-18

512K x 8

CS1# ⁽¹⁾

CS2# ⁽¹⁾

CS1# ⁽¹⁾

CS2# ⁽¹⁾

NOTE:

1. CS1# and CS2# are used to select the lower and upper 512Kx8 of the device. CS1# and CS2# must not be enabled at the same time.

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

July 2004

Rev. 5

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6

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