Datasheet > WNSC6D08650D

WNSC6D08650D

更新时间： 2024-04-09 19:00:20

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描述
Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies.

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WNSC6D08650D 数据手册

WeEn Semiconductors

WNSC6D08650D

Silicon Carbide Diode

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Notes Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

with heatsink compound; Fig. 4

0.78

K/W

R_th(j-a)

thermal resistance

from junction to

ambient free air

in free air

K/W

δ =

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

WNSC6D08650D

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Product data sheet

06 December 2022

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WNSC6D08650T	WEEN	Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency s	获取价格
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WNSC6D10650-A	WEEN	Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency	获取价格
WNSC6D10650B	WEEN	Silicon Carbide Schottky diode in a TO263 (D2PAK) plastic package, designed for high frequ	获取价格
WNSC6D10650BT2-A	WEEN	Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high fr	获取价格