Datasheet > WNSC6D08650D

WNSC6D08650D

更新时间： 2024-04-09 19:00:20

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描述
Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies.

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WNSC6D08650D 数据手册

WeEn Semiconductors

WNSC6D08650D

Silicon Carbide Diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Notes

Values

Unit

V_RRM

repetitive peak reverse

voltage

650

V_RWM

crest working reverse

voltage

650

V_R

reverse voltage

650

I_F(AV)

average forward current

δ = 0.5; square-wave pulse; T_mb≤ 159 °C;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward

current

δ = 0.5; t_p= 25 μs; T_mb≤ 159 °C;

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse

t_p= 10 μs; T_j(init)= 25 °C; square-wave pulse

sine-wave pulse; T_j(init)= 25 °C; t_p= 10 ms

640

I²t

I²t for fusing

20.48

A²s

°C

stg

storage temperature

junction temperature

-55 to 175

T_j

I_F(AV)= I_F(RMS)× √δ

V_o= 1.077 V; R_s= 0.0594 Ω

Fig. 2. Current derating as a function of mounting base

temperature

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

WNSC6D08650D

All information provided in this document is subject to legal disclaimers.

Product data sheet

06 December 2022

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