Datasheet > WNSC6D10650BT2-A

WNSC6D10650BT2-A

更新时间： 2024-04-09 18:59:41

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描述
Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high frequency switched-mode power supplies.

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WNSC6D10650BT2-A 数据手册

WNSC6D10650BT2-A

Silicon Carbide Diode

Rev.01 - 23 December 2022

Product data sheet

1. General description

Silicon Carbide Schottky diode in a TO263

(D2PAK) plastic package, designed for high

frequency switched-mode power supplies.

alogen-Free

RoHS

AEC - Q101 Qualified

2. Features and beneﬁts

•

New 6th Generation Technology

•

Low Forward Voltage Drop

Low Reverse Leakage Current

High Forward Surge Capability I_FSM

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

AEC-Q101 qualiﬁed

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

On board charger

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

T_j

repetitive peak reverse

voltage

650

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 143 °C;

Fig. 1; Fig. 2; Fig. 3

junction temperature

-55 to 175

°C

Symbol Parameter

Static characteristics

Conditions

Notes Min

Typ

Max

Unit

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; Fig. 5

I_F= 10 A; T_j= 150 °C; Fig. 5

1.26

1.35

1.40

1.55

Dynamic characteristics

Q_rrecovered charge

I_F= 10 A; dI_F/dt = 500 A/μs; V_R= 400 V;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...11

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