Datasheet > WNSC6D20650CW-A

WNSC6D20650CW-A

更新时间： 2024-04-09 19:03:10

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	448K
描述
Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequency switched-mode power supplies.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WNSC6D20650CW-A 数据手册

WNSC6D20650CW-A

Silicon Carbide Diode

Rev.01 - 30 May 2023

Product data sheet

1. General description

Dual Silicon Carbide Schottky diode in a

TO247 plastic package, designed for high

frequency switched-mode power supplies.

alogen-Free

RoHS

AEC - Q101 Qualified

2. Features and beneﬁts

•

New 6th Generation Technology

•

Low Forward Voltage Drop

Low Reverse Leakage Current

High Forward Surge Capability I_FSM

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

AEC-Q101 qualiﬁed

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

On board charger

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_RRM

I_O(AV)

T_j

repetitive peak reverse

voltage

650

limiting average forward δ = 0.5 ; square-wave pulse; T_mb≤ 133 °C;

current

both diodes conducting; Fig. 1; Fig. 2; Fig. 3

junction temperature

-55 to 175

°C

Symbol Parameter

Static characteristics

Conditions

Notes Min

Typ

Max

Unit

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; per diode; Fig. 5

I_F= 10 A; T_j= 150 °C; per diode; Fig. 5

1.26

1.35

1.40

1.55

Dynamic characteristics

Q_rrecovered charge

I_F= 10 A; dI_F/dt = 500 A/μs; V_R= 400 V;

T_j= 25 °C; per diode; Fig. 7

12 3 4 5 6 7...11

中文翻译

下载PDF

与WNSC6D20650CW-A相关器件

型号	品牌	获取价格	描述	数据表
WNSC6D20650W	WEEN	获取价格	Silicon Carbide Schottky Diode in 2-lead TO247-2L plastic package, designed for high frequ
WNSC6D20650W-A	WEEN	获取价格	Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency
WNSC6D20650X	WEEN	获取价格	Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency
WNSC6D30650CW	WEEN	获取价格	Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequenc
WNSC6D30650CW-A	WEEN	获取价格	Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequenc
WNSC6D30650W	WEEN	获取价格	Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency
WNSC6D40650CW	WEEN	获取价格	Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequenc
WNSC6D40650CW-A	WEEN	获取价格	Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequenc
WNSCM160120W	WEEN	获取价格	Silicon Carbide MOSFET in a 3-lead TO247 plastic package, designed for high frequency, hig
WNSCM80120R	WEEN	获取价格	Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high ef