生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | PEAK TURN-OFF CURRENT IS 1200A | 标称电路换相断开时间: | 100 µs |
配置: | SINGLE | 最大直流栅极触发电流: | 1300 mA |
最大直流栅极触发电压: | 1 V | JESD-30 代码: | O-CEDB-N2 |
最大漏电流: | 50 mA | 通态非重复峰值电流: | 13000 A |
元件数量: | 1 | 端子数量: | 2 |
最大通态电流: | 790000 A | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 1600 A |
断态重复峰值电压: | 2000 V | 重复峰值反向电压: | 2000 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | SYMMETRICAL GTO SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG12020R02 | IXYS |
获取价格 |
Gate Turn-Off SCR, 2000V V(DRM), 200V V(RRM), 1 Element | |
WG12020R03 | IXYS |
获取价格 |
Gate Turn-Off SCR, 2000V V(DRM), 300V V(RRM), 1 Element | |
WG12020R04 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2000 V, GATE TURN-OFF SCR | |
WG12020R06 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2000 V, GATE TURN-OFF SCR | |
WG12020R07 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2000 V, GATE TURN-OFF SCR | |
WG12020R08 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2000 V, GATE TURN-OFF SCR | |
WG12020R09 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2000 V, GATE TURN-OFF SCR | |
WG12020R10 | IXYS |
获取价格 |
Gate Turn-Off SCR, 2000V V(DRM), 1000V V(RRM), 1 Element | |
WG12020R11 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2000 V, GATE TURN-OFF SCR | |
WG12020R13 | IXYS |
获取价格 |
Gate Turn-Off SCR, 2000V V(DRM), 1300V V(RRM), 1 Element |