5秒后页面跳转
WG10034FR33 PDF预览

WG10034FR33

更新时间: 2024-10-04 17:35:43
品牌 Logo 应用领域
IXYS
页数 文件大小 规格书
1页 32K
描述
Gate Turn-Off SCR, 3400V V(DRM), 3300V V(RRM), 1 Element

WG10034FR33 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:PEAK TURN-OFF CURRENT IS 1000A
配置:SINGLEJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
断态重复峰值电压:3400 V重复峰值反向电压:3300 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:GATE TURN-OFF SCR

WG10034FR33 数据手册

  

与WG10034FR33相关器件

型号 品牌 获取价格 描述 数据表
WG10034R ETC

获取价格

THYRISTOR|GTO|3.4KV V(DRM)|TO-200VAR74W
WG10034R02 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 200V V(RRM), 1 Element
WG10034R04 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 400V V(RRM), 1 Element
WG10034R05 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 500V V(RRM), 1 Element
WG10034R06 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 600V V(RRM), 1 Element
WG10034R07 IXYS

获取价格

Silicon Controlled Rectifier, 3400 V, GATE TURN-OFF SCR
WG10034R08 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 800V V(RRM), 1 Element
WG10034R09 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 900V V(RRM), 1 Element
WG10034R10 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 1000V V(RRM), 1 Element
WG10034R11 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 1100V V(RRM), 1 Element