生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | PEAK TURN-OFF CURRENT IS 1000A |
配置: | SINGLE | JESD-30 代码: | O-CEDB-N2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
断态重复峰值电压: | 3400 V | 重复峰值反向电压: | 3300 V |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | END | 触发设备类型: | GATE TURN-OFF SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG10034R | ETC |
获取价格 |
THYRISTOR|GTO|3.4KV V(DRM)|TO-200VAR74W | |
WG10034R02 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3400V V(DRM), 200V V(RRM), 1 Element | |
WG10034R04 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3400V V(DRM), 400V V(RRM), 1 Element | |
WG10034R05 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3400V V(DRM), 500V V(RRM), 1 Element | |
WG10034R06 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3400V V(DRM), 600V V(RRM), 1 Element | |
WG10034R07 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 3400 V, GATE TURN-OFF SCR | |
WG10034R08 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3400V V(DRM), 800V V(RRM), 1 Element | |
WG10034R09 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3400V V(DRM), 900V V(RRM), 1 Element | |
WG10034R10 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3400V V(DRM), 1000V V(RRM), 1 Element | |
WG10034R11 | IXYS |
获取价格 |
Gate Turn-Off SCR, 3400V V(DRM), 1100V V(RRM), 1 Element |