Datasheet > WED3DL324V-BC

WED3DL324V-BC

更新时间： 2024-09-29 23:41:59

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
27页	828K
描述
SDRAM MCP

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中文翻译

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数据手册

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WED3DL324V-BC 数据手册

WED3DL324V

White Electronic Designs

4Mx32 SDRAM

FEATURES

DESCRIPTION

n 53% Space Savings vsꢀ Monolithic Solution

n Reduced System Inductance and Capacitance

n Pinout and Footprint Compatible to SSRAM 119 BGA

n 3ꢀ3V Operating Supply Voltage

n Fully Synchronous to Positive Clock Edge

n Clock Frequencies of 133, 125 and 100MHz

n Burst Operation

The WED3DL324V is a 4Mx32 Synchronous DRAM con-

figured as 4x1Mx32ꢀ The SDRAM BGA is constructed

with two 4Mx16 SDRAM die mounted on a multi-layer

laminate substrate and packaged in a 119 lead, 14mm

by 22mm, BGAꢀ

The WED3DL324V is available in clock speeds of

133MHz, 125MHz and 100MHzꢀ The range of operating

frequencies, programmable burst lengths and program-

mable latencies allow the same device to be useful for a

variety of high bandwidth, high performance memory sys-

tem applicationsꢀ

Sequential or Interleave

Burst Length = Programmable 1, 2, 4, 8 or Full Page

Burst Read and Write

The package and design provides performance enhance-

ments via a 50% reduction in capacitance vsꢀ two mono-

lithic devicesꢀ The design includes internal ground and

power planes which reduces inductance on the ground

and power pins allowing for improved decoupling and a

reduction in system noiseꢀ

Multiple Burst Read and Single Write

n Data Mask Control Per Byte

n Auto and Self Refresh

n Automatic and Controlled Precharge Commands

n Suspend Mode and Power Down Mode

n 119 Pin BGA, JEDEC MO-163

FIGꢀ 1 PINOUT (TOP VIEW)

PIN DESCRIPTION

A0 A11

BA0-1

Address Bus

Bank Select Addresses

Data Bus

BA₀

A₁₀

VDDQ

CAS

VDD

RAS

CKE

VDD

CLK

A₁

A₇

VDDQ

NC/A₁₂

BA₁

A₁₁

A₈

A₉

CLK

Clock

DQC

VDDQ

DQC

VDDQ

DQD

VDDQ

DQD

VSS

DQMB

VSS

DQMA

VSS

A₃

DQB

VDD

DQA

A₂

DQB

VDDQ

DQB

VDDQ

DQA

VDDQ

DQA

CKE

Clock Enable

DQC

VDD

DQD

VSS

DQM

RAS

CAS

Data Input/Output Mask

Row Address Strobe

Column Address Strobe

Chip Enable

VSS

DQMC

VSS

VDD

VDDQ

VSS

Power Supply pins, 3+3V

Data Bus Power Supply pins,3+3V

Ground pins

VSS

DQMD

VSS

A₀

A₆

VDD

A₄

A₅

VDDQ

*NOTE:

Pin B3 is designated as NC/A₁₂ꢀ This pin is used for future density upgrades as address pin A₁₂ꢀ

Octꢀ 2001 Revꢀ1

ECO #15407

White Electronic Designs Corporation (508) 366-5151 wwwꢀwhiteedcꢀcom

12 3 4 5 6 7...27

中文翻译

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与WED3DL324V-BC相关器件

型号	品牌	获取价格	描述	数据表
WED3DL328V	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V10BC	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V10BI	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V12BC	WEDC	获取价格	Synchronous DRAM Module, 8MX32, 8ns, CMOS, PBGA119, 14 X 22 MM, MO-163, BGA-119
WED3DL328V7BC	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V7BI	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V8BC	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V8BI	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V-B	ETC	获取价格	TMS320C6000 Family
WED3DL328V-BC	ETC	获取价格	SDRAM MCP

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