Datasheet > WED3DL328V

WED3DL328V

更新时间： 2024-09-30 03:54:59

品牌	Logo	应用领域
WEDC		动态存储器
页数	文件大小	规格书
27页	1197K
描述
8Mx32 SDRAM

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中文翻译

获取价格

数据手册

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WED3DL328V 数据手册

WED3DL328V

White Electronic Designs

8Mx32 SDRAM

FEATURES

DESCRIPTION

The WED3DL328V is an 8Mx32 Synchronous DRAM

conﬁgured as 4x2Mx32. The SDRAM BGA is constructed

with two 8Mx16 SDRAM die mounted on a multi-layer

laminate substrate and packaged in a 119 lead, 14mm by

22mm, BGA.



53% Space Savings vs. Monolithic Solution

Reduced System Inductance and Capacitance

Pinout and Footprint Compatible to SSRAM 119 BGA

3.3V Operating Supply Voltage

The WED3DL328V is an ideal SDRAM wide I/O memory

solution for all high performance, computer applications

which include Network Processors, DSPs and Functional

ASICs.

Fully Synchronous to Positive Clock Edge

Clock Frequencies of 133MH_Z, 125MH_Zand 100MH_Z

Burst Operation



Sequential or Interleave

The WED3DL328V is available in clock speeds of 133MH_Z,

125MH_Zand 100MH_Z. The range of operating frequencies,

programmable burst lengths and programmable latencies

allow the same device to be useful for a variety of

high bandwidth, high performance memory system

applications.

Burst Length = Programmable 1, 2, 4, 8 or Full

Page



Burst Read and Write

Multiple Burst Read and Single Write



Data Mask Control Per Byte

The package and design provides performance

enhancements via a 50% reduction in capacitance vs.

two monolithic devices. The design includes internal ground

and power planes which reduces inductance on the ground

and power pins allowing for improved decoupling and a

reduction in system noise.

Auto and Self Refresh

Automatic and Controlled Precharge Commands

Suspend Mode and Power Down Mode

119 Pin BGA, JEDEC MO-163

PIN CONFIGURATION

(TOP VIEW)

PIN DESCRIPTION

A0 – A11 Address Bus

BA0-1

Bank Select Addresses

Data Bus

V_CCQ

BA0

A10

V_CCQ

NC/A12*

BA1

V_SS

CAS#

V_CC

A11

Clock

CKE

DQM

RAS#

CAS#

CE#

V_CC

Clock Enable

DQc

V_CCQ

DQc

V_CCQ

DQd

V_CCQ

DQd

V_SS

DQMB

V_SS

DQb

V_CCQ

DQb

V_CCQ

DQa

V_CCQ

DQa

Data Input/Output Mask

Row Address Strobe

Column Address Strobe

Chip Enable

DQc

VCC

DQd

V_SS

CE#

RAS#

DQb

V_CC

DQa

V_SS

DQMC

V_SS

CKE

V_CC

Power Supply pins, 3.3V

Data Bus Power Supply pins,3.3V

Ground pins

V_CCQ

V_SS

DQMA

V_SS

DQMD

V_SS

WE#

V_SS

V_CC

V_CCQ

*NOTE: Pin B3 is designated as NC/A12. This pin is used for future density upgrades as address pin A12.

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

June, 2002

Rev. 1

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7...27

中文翻译

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与WED3DL328V相关器件

型号	品牌	获取价格	描述	数据表
WED3DL328V10BC	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V10BI	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V12BC	WEDC	获取价格	Synchronous DRAM Module, 8MX32, 8ns, CMOS, PBGA119, 14 X 22 MM, MO-163, BGA-119
WED3DL328V7BC	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V7BI	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V8BC	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V8BI	WEDC	获取价格	8Mx32 SDRAM
WED3DL328V-B	ETC	获取价格	TMS320C6000 Family
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