Datasheet > WED3DL328V-B

WED3DL328V-B

更新时间： 2024-09-29 23:41:59

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TMS320C6000 Family

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WED3DL328V-B 数据手册

WED3DL328V

White Electronic Designs

8Mx32 SDRAM

DESCRIPTION

FEATURES

n 53% Space Savings vsꢀ Monolithic Solution

n Reduced System Inductance and Capacitance

n Pinout and Footprint Compatible to SSRAM 119 BGA

n 3ꢀ3V Operating Supply Voltage

The WED3DL328V is an 8Mx32 Synchronous DRAM

configured as 4x2Mx32ꢀ The SDRAM BGA is con-

structed with two 8Mx16 SDRAM die mounted on a

multi-layer laminate substrate and packaged in a 119

lead, 14mm by 22mm, BGAꢀ

n Fully Synchronous to Positive Clock Edge

n Clock Frequencies of 133MHz, 125MHz and 100MHz

n Burst Operation

The WED3DL328V is an ideal SDRAM wide I/O memory

solution for all high performance, computer applica-

tions which include Network Processors, DSPs and

Functional ASICsꢀ

Sequential or Interleave

The WED3DL328V is available in clock speeds of

133MHz, 125MHz and 100MHzꢀ The range of operat-

ing frequencies, programmable burst lengths and

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applicationsꢀ

Burst Length = Programmable 1, 2, 4, 8 or Full Page

Burst Read and Write

Multiple Burst Read and Single Write

n Data Mask Control Per Byte

n Auto and Self Refresh

The package and design provides performance en-

hancements via a 50% reduction in capacitance vsꢀ

two monolithic devicesꢀ The design includes internal

ground and power planes which reduces inductance

on the ground and power pins allowing for improved

decoupling and a reduction in system noiseꢀ

n Automatic and Controlled Precharge Commands

n Suspend Mode and Power Down Mode

n 119 Pin BGA, JEDEC MO-163

PIN DESCRIPTION

FIGꢀ 1

PIN CONFIGURATION

(TOP VIEW)

A₀ A₁₁

BA_0-1

Address Bus

Bank Select Addresses

Data Bus

BA₀

NC/A₁₂

BA₁

VSS

DQMC

VSS

A₁₀

VDDQ

CAS

VDD

A₇

VDDQ

A₁₁

CLK

CKE

DQM

RAS

CAS

Clock

A₉

A₈

Clock Enable

DQC

VDDQ

DQC

VDDQ

DQD

VDDQ

DQD

VSS

DQMB

VSS

DQB

VDDQ

DQB

VDDQ

DQA

VDDQ

DQA

Data Input/Output Mask

Row Address Strobe

Column Address Strobe

Chip Enable

DQC

VDD

DQD

DQB

VDD

DQA

RAS

CKE

VDD

CLK

A₁

VDD

Power Supply pins, 3(3V

Data Bus Power Supply pins,3(3V

Ground pins

VDDQ

VSS

DQMD

VSS

DQMA

VSS

A₀

A₆

VDD

A₄

A₂

A₅

A₃

VDDQ

*NOTE: Pin B₃is designated as NC/A₁₂ꢀ This pin is used for future density upgrades as address pin A₁₂

ꢀ

White Electronic Designs Corporation (508) 366-5151 wwwꢀwhiteedcꢀcom

June 2002, Revꢀ 1

ECO #15237

12 3 4 5 6 7...27

中文翻译

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与WED3DL328V-B相关器件

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WED3DL328V-BC	ETC	获取价格	SDRAM MCP
WED3DL644V	WEDC	获取价格	4Mx64 SDRAM
WED3DL644V10BC	WEDC	获取价格	4Mx64 SDRAM
WED3DL644V10BI	WEDC	获取价格	4Mx64 SDRAM
WED3DL644V7BC	WEDC	获取价格	4Mx64 SDRAM
WED3DL644V7BI	WEDC	获取价格	4Mx64 SDRAM
WED3DL644V8BC	WEDC	获取价格	4Mx64 SDRAM
WED3DL644V8BI	WEDC	获取价格	4Mx64 SDRAM
WED3DL644V-BC	ETC	获取价格	SDRAM MCP
WED3EG6417S202D4	WEDC	获取价格	128MB - 16Mx64 DDR SDRAM UNBUFFERED

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