是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SODIMM |
包装说明: | DIMM, | 针数: | 144 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.28 | 风险等级: | 5.77 |
访问模式: | FOUR BANK PAGE BURST | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-XZMA-N144 | 内存密度: | 536870912 bit |
内存集成电路类型: | SYNCHRONOUS DRAM MODULE | 内存宽度: | 64 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 144 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
组织: | 8MX64 | 封装主体材料: | UNSPECIFIED |
封装代码: | DIMM | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 自我刷新: | YES |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 端子形式: | NO LEAD |
端子位置: | ZIG-ZAG | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WED3DG649V10D2 | WEDC |
获取价格 |
64MB- 8M x 64 SDRAM UNBUFFERED |
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WED3DG649V75D1 | WEDC |
获取价格 |
64MB- 8Mx64 SDRAM, UNBUFFERED |
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WED3DG649V75D1 | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 8MX64, CMOS, SO-DIMM, 144 PIN |
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WED3DG649V75D1I | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 8MX64, CMOS, SO-DIMM, 144 PIN |
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WED3DG649V75D2 | WEDC |
获取价格 |
64MB- 8M x 64 SDRAM UNBUFFERED |
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WED3DG649V75D2I | WEDC |
获取价格 |
Synchronous DRAM Module, 8MX64, CMOS, DIMM-168 |
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WED3DG649V7D1 | WEDC |
获取价格 |
64MB- 8Mx64 SDRAM, UNBUFFERED |
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WED3DG649V7D1 | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 8MX64, CMOS, SO-DIMM, 144 PIN |
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WED3DG649V7D1I | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 8MX64, CMOS, SO-DIMM, 144 PIN |
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WED3DG649V7D2 | WEDC |
获取价格 |
64MB- 8M x 64 SDRAM UNBUFFERED |
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