生命周期: | Obsolete | 零件包装代码: | DIMM |
包装说明: | , | 针数: | 168 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.36 | 风险等级: | 5.72 |
Is Samacsys: | N | 访问模式: | FOUR BANK PAGE BURST |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-XDMA-N168 |
内存密度: | 4294967296 bit | 内存集成电路类型: | SYNCHRONOUS DRAM MODULE |
内存宽度: | 64 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 168 |
字数: | 67108864 words | 字数代码: | 64000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 64MX64 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 认证状态: | Not Qualified |
自我刷新: | YES | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | NO LEAD |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WED3DG6365V75D2 | WEDC |
获取价格 |
512MB - 64Mx64, SDRAM UNBUFFERED |
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WED3DG6365V75D2I | WEDC |
获取价格 |
Synchronous DRAM Module, 64MX64, CMOS, DIMM-168 |
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WED3DG6365V75D2I | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 64MX64, CMOS, DIMM-168 |
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WED3DG6365V7D2 | WEDC |
获取价格 |
512MB - 64Mx64, SDRAM UNBUFFERED |
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WED3DG6365V7D2I | WEDC |
获取价格 |
Synchronous DRAM Module, 64MX64, CMOS, DIMM-168 |
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WED3DG6365V7D2I | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 64MX64, CMOS, DIMM-168 |
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WED3DG6366V10D2 | WEDC |
获取价格 |
512MB -64Mx64, SDRAM UNBUFFERED |
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WED3DG6366V10D2G | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 64MX8, 6ns, CMOS, LEAD FREE, DIMM-144 |
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WED3DG6366V10D2I | WEDC |
获取价格 |
暂无描述 |
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WED3DG6366V75D2 | WEDC |
获取价格 |
512MB -64Mx64, SDRAM UNBUFFERED |
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