生命周期: | Obsolete | 零件包装代码: | DIMM |
包装说明: | , | 针数: | 168 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.36 | 风险等级: | 5.72 |
访问模式: | FOUR BANK PAGE BURST | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-XDMA-N168 | 内存密度: | 4294967296 bit |
内存集成电路类型: | SYNCHRONOUS DRAM MODULE | 内存宽度: | 64 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 168 | 字数: | 67108864 words |
字数代码: | 64000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 64MX64 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
认证状态: | Not Qualified | 自我刷新: | YES |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | NO LEAD | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WED3DG6366V10D2 | WEDC |
获取价格 |
512MB -64Mx64, SDRAM UNBUFFERED | |
WED3DG6366V10D2G | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 64MX8, 6ns, CMOS, LEAD FREE, DIMM-144 | |
WED3DG6366V10D2I | WEDC |
获取价格 |
暂无描述 | |
WED3DG6366V75D2 | WEDC |
获取价格 |
512MB -64Mx64, SDRAM UNBUFFERED | |
WED3DG6366V75D2F | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 64MX8, 5.4ns, CMOS, LEAD FREE, DIMM-144 | |
WED3DG6366V75D2G | WEDC |
获取价格 |
Synchronous DRAM Module, 64MX8, 5.4ns, CMOS, LEAD FREE, DIMM-144 | |
WED3DG6366V75D2I | WEDC |
获取价格 |
DRAM, | |
WED3DG6366V7D2 | WEDC |
获取价格 |
512MB -64Mx64, SDRAM UNBUFFERED | |
WED3DG6366V7D2F | WEDC |
获取价格 |
暂无描述 | |
WED3DG6366V7D2G | WEDC |
获取价格 |
Synchronous DRAM Module, 64MX8, 5.4ns, CMOS, LEAD FREE, DIMM-144 |