5秒后页面跳转
WED3C755E8M-350BHC PDF预览

WED3C755E8M-350BHC

更新时间: 2024-01-25 04:42:06
品牌 Logo 应用领域
WEDC 时钟外围集成电路
页数 文件大小 规格书
16页 617K
描述
RISC Microprocessor, 32-Bit, 350MHz, CMOS, CBGA255, 21 X 25 MM, 3.90 MM HEIGHT, 1.27 MM PITCH, CERAMIC, HITCE, BGA-255

WED3C755E8M-350BHC 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:21 X 25 MM, 3.90 MM HEIGHT, 1.27 MM PITCH, CERAMIC, HITCE, BGA-255Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
地址总线宽度:32位大小:32
边界扫描:YES最大时钟频率:66 MHz
外部数据总线宽度:64格式:FLOATING POINT
集成缓存:YESJESD-30 代码:R-CBGA-B255
JESD-609代码:e0长度:25 mm
低功率模式:YES端子数量:255
最高工作温度:70 °C最低工作温度:
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:BGA
封装等效代码:BGA255,16X16,50封装形状:RECTANGULAR
封装形式:GRID ARRAY峰值回流温度(摄氏度):NOT SPECIFIED
电源:2,3.3 V认证状态:Not Qualified
速度:350 MHz子类别:Microprocessors
最大供电电压:2.1 V最小供电电压:1.9 V
标称供电电压:2 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:21 mm
uPs/uCs/外围集成电路类型:MICROPROCESSOR, RISCBase Number Matches:1

WED3C755E8M-350BHC 数据手册

 浏览型号WED3C755E8M-350BHC的Datasheet PDF文件第2页浏览型号WED3C755E8M-350BHC的Datasheet PDF文件第3页浏览型号WED3C755E8M-350BHC的Datasheet PDF文件第4页浏览型号WED3C755E8M-350BHC的Datasheet PDF文件第5页浏览型号WED3C755E8M-350BHC的Datasheet PDF文件第6页浏览型号WED3C755E8M-350BHC的Datasheet PDF文件第7页 
WED3C755E8M-XBHX  
White Electronic Designs  
755E RISC MICROPROCESSOR HiTCE™ MULTI-CHIP PACKAGE  
OVERVIEW  
FEATURES  
The WEDC 755E/SSRAM multichip package is targeted  
for high performance, space sensitive, low power systems  
and supports the following power management features:  
doze, nap, sleep and dynamic power management. The  
WED3C755E8M-XBHX multichip package consists of:  
The WED3C755E8M-XBHX is offered in Commercial  
(0°C to +70°C), industrial (-40°C to +85°C) and military  
(-55°C to +125°C) temperature ranges and is well suited  
for embedded applications such as missiles, aerospace,  
ight computers, re control systems and rugged critical  
systems.  
„
„
755 RISC processor (E die revision)  
„
Footprint compatible with WED3C755E8M-XBX,  
WED3C7558M-XBX and WED3C750A8M-200BX  
Dedicated 1MB SSRAM L2 cache, congured as  
128Kx72  
„
„
„
Pinout compatible with WED3C755E8MF-XBX  
Footprint compatible with Motorola MPC 745  
„
„
21mmx25mm, 255 HiTCE™ Ball Grid Array (HBGA)  
Core Frequency/L2 Cache Frequency (300MHz/  
150MHz, 350MHz/175MHz)  
HiTCE™ interposer for TCE compatibility to  
laminate substrates for increased board level  
reliability  
„
Maximum 60x Bus frequency = 66MHz  
This product is subject to change without notice.  
FIGURE 1 – MULTI-CHIP PACKAGE DIAGRAM  
SSRAM  
μP  
755E  
SSRAM  
HiTCE™ is a trademark of Kyocera Corp.  
October 2005  
Rev. 2  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

与WED3C755E8M-350BHC相关器件

型号 品牌 获取价格 描述 数据表
WED3C755E8M-350BHI WEDC

获取价格

RISC Microprocessor, 32-Bit, 350MHz, CMOS, CBGA255, 21 X 25 MM, 3.90 MM HEIGHT, 1.27 MM PI
WED3C755E8M-350BHM WEDC

获取价格

RISC Microprocessor, 32-Bit, 350MHz, CMOS, CBGA255, 21 X 25 MM, 3.90 MM HEIGHT, 1.27 MM PI
WED3C755E8M350BI WEDC

获取价格

RISC MICROPROCESSOR MULTI-CHIP PACKAGE
WED3C755E8M-350BI ETC

获取价格

Microprocessor
WED3C755E8M350BM WEDC

获取价格

RISC MICROPROCESSOR MULTI-CHIP PACKAGE
WED3C755E8M-350BM ETC

获取价格

Microprocessor
WED3C755E8MC300BC MICROSEMI

获取价格

350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255
WED3C755E8MC300BI MICROSEMI

获取价格

350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255
WED3C755E8MC-300BI MICROSEMI

获取价格

350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255
WED3C755E8MC300BM MICROSEMI

获取价格

350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255