是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 255 |
Reach Compliance Code: | unknown | 风险等级: | 5.45 |
地址总线宽度: | 边界扫描: | YES | |
最大时钟频率: | 350 MHz | 外部数据总线宽度: | |
格式: | FIXED POINT | 集成缓存: | YES |
JESD-30 代码: | R-CBGA-B255 | 低功率模式: | YES |
端子数量: | 255 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED | |
封装代码: | BGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 3.85 mm |
速度: | 350 MHz | 最大供电电压: | 3.465 V |
最小供电电压: | 3.135 V | 标称供电电压: | 3.3 V |
表面贴装: | YES | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | uPs/uCs/外围集成电路类型: | MICROPROCESSOR, RISC |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WED3C755E8MC300BI | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC-300BI | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC300BM | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC350BC | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC-350BC | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC350BI | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC350BM | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC-350BM | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8M-XBX | WEDC |
获取价格 |
RISC MICROPROCESSOR MULTI-CHIP PACKAGE | |
WED3DG63126V10D2 | WEDC |
获取价格 |
Synchronous DRAM Module, 128MX64, CMOS, DIMM-168 |