生命周期: | Obsolete | 包装说明: | BGA, BGA255,16X16,50 |
Reach Compliance Code: | compliant | 风险等级: | 5.72 |
其他特性: | LG-MAX;WD-MAX;SEATED HT-CALCULATED | 地址总线宽度: | 32 |
位大小: | 32 | 边界扫描: | YES |
外部数据总线宽度: | 64 | 格式: | FIXED POINT |
集成缓存: | YES | JESD-30 代码: | R-CBGA-B255 |
长度: | 25.25 mm | 低功率模式: | YES |
端子数量: | 255 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | BGA | 封装等效代码: | BGA255,16X16,50 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
电源: | 2,2.5/3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 3.85 mm | 速度: | 300 MHz |
子类别: | Microprocessors | 最大供电电压: | 2.1 V |
最小供电电压: | 1.9 V | 标称供电电压: | 2 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 1.27 mm | 端子位置: | BOTTOM |
宽度: | 21.21 mm | uPs/uCs/外围集成电路类型: | MICROPROCESSOR, RISC |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WED3C755E8MC300BM | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC350BC | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC-350BC | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC350BI | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC350BM | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8MC-350BM | MICROSEMI |
获取价格 |
350MHz, RISC PROCESSOR, CBGA255, 21 X 25 MM, CERAMIC, BGA-255 | |
WED3C755E8M-XBX | WEDC |
获取价格 |
RISC MICROPROCESSOR MULTI-CHIP PACKAGE | |
WED3DG63126V10D2 | WEDC |
获取价格 |
Synchronous DRAM Module, 128MX64, CMOS, DIMM-168 | |
WED3DG63126V7D2 | WEDC |
获取价格 |
Synchronous DRAM Module, 128MX64, CMOS, DIMM-168 | |
WED3DG6316V10D2 | WEDC |
获取价格 |
128MB-16Mx64 SDRAM UNBUFFERED |