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WE128K32NP-250H1MA PDF预览

WE128K32NP-250H1MA

更新时间: 2024-02-21 02:12:36
品牌 Logo 应用领域
美高森美 - MICROSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
14页 403K
描述
EEPROM Module, 128KX32, 250ns, Parallel, CMOS, CPGA66, 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66

WE128K32NP-250H1MA 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66Reach Compliance Code:unknown
风险等级:5.62最长访问时间:250 ns
其他特性:USER CONFIGURABLE AS 512K X 8备用内存宽度:16
数据轮询:YES耐久性:10000 Write/Erase Cycles
JESD-30 代码:S-CPGA-P66JESD-609代码:e0
长度:27.3 mm内存密度:4194304 bit
内存集成电路类型:EEPROM MODULE内存宽度:32
功能数量:1端子数量:66
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX32
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:PGA
封装等效代码:PGA66,11X11封装形状:SQUARE
封装形式:GRID ARRAY页面大小:128 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:4.34 mm
最大待机电流:0.0025 A子类别:EEPROMs
最大压摆率:0.25 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES宽度:27.3 mm
最长写入周期时间 (tWC):10 ms写保护:SOFTWARE
Base Number Matches:1

WE128K32NP-250H1MA 数据手册

 浏览型号WE128K32NP-250H1MA的Datasheet PDF文件第2页浏览型号WE128K32NP-250H1MA的Datasheet PDF文件第3页浏览型号WE128K32NP-250H1MA的Datasheet PDF文件第4页浏览型号WE128K32NP-250H1MA的Datasheet PDF文件第5页浏览型号WE128K32NP-250H1MA的Datasheet PDF文件第6页浏览型号WE128K32NP-250H1MA的Datasheet PDF文件第7页 
WE128K32-XXX  
White Electronic Designs  
128Kx32 EEPROM MODULE, SMD 5962-94585  
FEATURES  
Data Polling for End of Write Detection  
Hardware and Software Data Protection  
TTL Compatible Inputs and Outputs  
5 Volt Power Supply  
Access Times of 120*, 140, 150, 200, 250, 300ns  
Packaging:  
• 66-pin, PGA Type, 27.3mm (1.075") square,  
Hermetic Ceramic HIP (Package 400)  
Built-in Decoupling Caps and Multiple Ground  
• 68 lead, 22.4mm sq. CQFP (G2T), 4.57mm  
(0.180") high, (Package 509)  
Pins for Low Noise Operation  
Weight  
Organized as 128Kx32; User Configurable as  
WE128K32-XG2TX - 8 grams typical  
WE128K32-XH1X - 13 grams typical  
256Kx16 or 512Kx8  
Write Endurance 10,000 Cycles  
*
120ns not available for SMD product  
Data Retention Ten Years Minimum (at +25°C)  
Commercial, Industrial and Military Temperature  
Ranges  
Low Power CMOS  
Automatic Page Write Operation  
Page Write Cycle Time: 10ms Max  
FIG. 1 PIN CONFIGURATION FOR WE128K32N-XH1X  
PIN DESCRIPTION  
I/O0-31 Data Inputs/Outputs  
TOP VIEW  
A0-16  
WE1-4  
CS1-4  
OE  
Address Inputs  
Write Enables  
Chip Selects  
Output Enable  
Power Supply  
VCC  
GND  
NC  
Ground  
Not Connected  
BLOCK DIAGRAM  
January 2004 Rev. 9  
1
WhiteElectronicDesignsCorporation(602)437-1520www.whiteedc.com  

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