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W24257CJ70LL PDF预览

W24257CJ70LL

更新时间: 2024-01-11 00:13:12
品牌 Logo 应用领域
华邦 - WINBOND 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 211K
描述
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

W24257CJ70LL 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.83
Is Samacsys:N最长访问时间:70 ns
JESD-30 代码:R-PDSO-J28长度:18.03 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:3.56 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:7.62 mm
Base Number Matches:1

W24257CJ70LL 数据手册

 浏览型号W24257CJ70LL的Datasheet PDF文件第1页浏览型号W24257CJ70LL的Datasheet PDF文件第2页浏览型号W24257CJ70LL的Datasheet PDF文件第3页浏览型号W24257CJ70LL的Datasheet PDF文件第5页浏览型号W24257CJ70LL的Datasheet PDF文件第6页浏览型号W24257CJ70LL的Datasheet PDF文件第7页 
Preliminary W24257C  
AC Characteristics, continued  
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C)  
Read Cycle  
PARAMETER  
SYM.  
W24257C-70  
W24257C-10  
UNIT  
MIN.  
MAX.  
MIN.  
MAX.  
Read Cycle Time  
TRC  
70  
-
-
100  
-
100  
100  
50  
-
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
Address Access Time  
TAA  
70  
70  
35  
-
-
-
Chip Select Access Time  
TACS  
TAOE  
TCLZ*  
TOLZ*  
TCHZ*  
TOHZ*  
TOH  
-
Output Enable to Output Valid  
Chip Selection to Output in Low Z  
Output Enable to Output in Low Z  
Chip Deselection to Output in High Z  
Output Disable to Output in High Z  
Output Hold from Address Change  
* These parameters are sampled but not 100% tested  
-
-
10  
5
10  
5
-
-
-
-
30  
30  
-
35  
35  
-
-
-
10  
10  
Write Cycle  
PARAMETER  
SYM.  
W24257C-70  
W24257C-10  
UNIT  
MIN.  
70  
60  
60  
0
MAX.  
MIN.  
100  
80  
80  
0
MAX.  
Write Cycle Time  
TWC  
TCW  
TAW  
TAS  
-
-
-
-
-
-
-
-
-
-
-
-
nS  
nS  
nS  
nS  
nS  
nS  
Chip Selection to End of Write  
Address Valid to End of Write  
Address Setup Time  
Write Pulse Width  
TWP  
TWR  
45  
0
60  
0
Write Recovery Time  
CS, WE  
Data Valid to End of Write  
Data Hold from End of Write  
Write to Output in High Z  
TDW  
30  
0
-
-
-
40  
0
-
-
-
nS  
nS  
nS  
nS  
nS  
TDH  
TWHZ*  
TOHZ*  
TOW  
30  
30  
-
30  
30  
-
Output Disable to Output in High Z  
Output Active from End of Write  
-
-
0
0
* These parameters are sampled but not 100% tested  
- 4 -  

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