Datasheet > W16NK60Z

W16NK60Z

更新时间： 2024-11-21 06:01:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	235K
描述
N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH™ MOSFET

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W16NK60Z 数据手册

STP16NK60Z - STB16NK60Z-S

STW16NK60Z

N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247

Zener - Protecdet SuperMESH™ MOSFET

TARGET SPECIFICATION

Table 1: General Features

Figure 1: Package

TYPE

DSS

DS(on)

STP16NK60Z

STB16NK60Z-S 600 V

STW16NK60Z 600 V

600 V

< 0.42 Ω 14 A 190 W

■ TYPICAL R (on) = 0.38 Ω

I SPAK

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

REPEATIBILITY

TO-220

DESCRIPTION

TO-247

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt capability

for the most demanding applications. Such series

complements ST full range of high voltage MOS-

FETs including revolutionary MDmesh™ products.

Figure 2: Internal Schematic Diagram

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES

Table 2: Order Codes

SALES TYPE

MARKING

PACKAGE

PACKAGING

STP16NK60Z

P16NK60Z

TO-220

TUBE

STB16NK60Z-S

STW16NK60Z

B16NK60Z

W16NK60Z

TUBE

I SPAK

TO-247

Rev. 1

September 2005

1/10

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

12 3 4 5 6 7...10

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