Datasheet > VVZ110-12IO7

VVZ110-12IO7

更新时间： 2023-12-06 20:13:14

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力特 - LITTELFUSE		/
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3页	137K
描述
三相桥半控和全控系列提供各种封装和高达2200V的击穿电压。

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VVZ110-12IO7 数据手册

VVZ 110

VVZ 175

I_dAVM= 110/167 A

V_RRM= 1200-1600 V

Three Phase Half Controlled

Rectifier Bridge, B6HK

V_RSM

V_DSM

V_RRM

V_DRM

Type

1300

1700

1200

1600

VVZ 110-12io7 VVZ 175-12io7

VVZ 175-16io7

Symbol

Test Conditions

Maximum Ratings

VVZ 110 VVZ 175

I_dAV

I_FRMS, I_TRMS

T_C= 85°C; module

per leg

110

167

Features

Package with screw terminals

Isolation voltage 3000 V~

Planar passivated chips

UL registered E72873

I_FSM, I_TSM

T_VJ= 45°C; t = 10 ms (50 Hz), sine

1150

1230

1500

1600

V_R= 0

t = 8.3 ms (60 Hz), sine

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

1000

1070

1350

1450

I²t

T_VJ= 45°C

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

6600

6280

11200

10750

A²s

Applications

Input rectifier for PWM converter

Input rectifier for switch mode power

supplies (SMPS)

Softstart capacitor charging

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

5000

4750

9100

8830

A²s

(di/dt)_cr

T_VJ= T_VJM

repetitive, I_T= 50 A

150

A/µs

f =400 Hz, t_P=200 µs

V_D= 2/3 V_DRM

I_G= 0.3 A,

di_G/dt = 0.3 A/µs, I_T= 1/3 • I_dAV

non repetitive,

500

1000

A/µs

V/µs

Advantages

Easy to mount with two screws

Space and weight savings

Improved temperature and power

(dv/dt)_cr

T_VJ= T_VJM; V_DR= 2/3 V_DRM

R_GK= ∞; method 1 (linear voltage rise)

V_RGM

P_GM

cycling

T_VJ= T_VJM

I_T= I_TAVM

t_p= 30 µs

t_p= 500 µs

t_p= 10 ms

≤

P_GAVM

0.5

T_VJ

T_VJM

T_stg

-40...+125

125

-40...+125

°C

V_ISOL

50/60 Hz, RMS t = 1 min

I_ISOL≤ 1 mA t = 1 s

2500

3000

M_d

Mounting torque (M6)

Terminal connection torque (M6)

typ.

5 15 %

300

Weight

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions.

20100706b

1 - 2

12 3

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