Datasheet > VTP100C

VTP100C

更新时间： 2024-11-26 22:15:15

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		光电二极管光电二极管
页数	文件大小	规格书
1页	29K
描述
VTP Process Photodiodes

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中文翻译

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技术参数
数据手册

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VTP100C 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	Is Samacsys：	N
Base Number Matches：	1

VTP100C 数据手册

VTP Process Photodiodes

VTP100C

PACKAGE DIMENSIONS inch (mm)

CASE 52 FLAT SIDELOOKER

CHIP ACTIVE AREA: .012 in²(7.45 mm²)

PRODUCT DESCRIPTION

Planar silicon photodiode in a molded plastic

sidelooker package. The package material is

clear. These diodes exhibit low dark current and

fast speed of response.

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

-40°C to 100°C

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)

VTP100C

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

Short Circuit Current

I Temperature Coefficient

H = 100 fc, 2850 K

2850 K

.20

µA

%/°C

TC I

Open Circuit Voltage

Temperature Coefficient

H = 100 fc, 2850 K

2850 K

350

-2.0

TC V

mV/°C

Dark Current

H = 0, VR = 10 V

H = 0, V = 10 mV

H = 0, V = 3 V

940 nm

Shunt Resistance

.25

GΩ

Junction Capacitance

Responsivity

.050

.55

A/(W/cm )

A/W

Sensitivity

@ Peak

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

400

1150

range

925

140

±70

1/2

Degrees

W ⁄ Hz

cm Hz / W

-14

NEP

9.0 x 10 (Typ.)

3.0 x 10 (Typ.)

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

中文翻译

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