Datasheet > VSSC8L45-M3

VSSC8L45-M3

更新时间： 2022-02-26 14:37:32

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	91K
描述
Trench MOS Schottky technology

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VSSC8L45-M3 数据手册

VSSC8L45-M3

Vishay General Semiconductor

www.vishay.com

10 000

1000

100

T_J= 25°C

f = 1.0 MHz

V_sig= 50 mVp-p

T_A= 150°C

T_A= 125°

T_A= 100°C

T_A= 25°C

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 5 - Typical Junction Capacitance

100

T_A= 150°C

Junction to Ambient

T_A= 125°C

T_A= 100°C

0.1

T_A= 25°C

0.01

0.001

90 100

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214AB (SMC)

Cathode Band

Mounting Pad Layout

0.185 (4.69) MAX.

0.246 (6.22)

0.220 (5.59)

0.126 (3.20)

0.114 (2.90)

0.126 (3.20) MIN.

0.280 (7.11)

0.260 (6.60)

0.060 (1.52) MIN.

0.012 (0.305)

0.006 (0.152)

0.320 (8.13) REF.

0.103 (2.62)

0.079 (2.06)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

Revision: 04-Mar-14

Document Number: 87793

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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