Datasheet > VS-VSKT71/10

VS-VSKT71/10

更新时间： 2022-09-29 19:43:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	320K
描述
MODULE THYRISTOR 75A ADD-A-PAK

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VS-VSKT71/10 数据手册

VS-VSKT71.., VS-VSKH71.., VS-VSKL71.., VS-VSKN71.. Series

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Vishay Semiconductors

TRIGGERING

PARAMETER

SYMBOL

P_GM

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

Maximum average gate power

Maximum peak gate current

Maximum peak negative gate voltage

P_G(AV)

I_GM

3.0

- V_GM

T_J= -40 °C

T_J= 25 °C

T_J= 125 °C

T_J= -40 °C

T_J= 25 °C

T_J= 125 °C

4.0

Anode supply = 6 V

resistive load

Maximum gate voltage required to trigger

Maximum gate current required to trigger

V_GT

2.5

1.7

270

150

Anode supply = 6 V

resistive load

I_GT

Maximum gate voltage that will not trigger

Maximum gate current that will not trigger

V_GD

I_GD

T_J= 125 °C, rated V_DRMapplied

0.25

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak reverse and off-state 

leakage current at V_RRM, V_DRM

I_RRM,

I_DRM

T_J= 125 °C, gate open circuit

3000 (1 min)

3600 (1 s)

Maximum RMS insulation voltage

V_INS

50 Hz

Maximum critical rate of rise of off-state voltage

dV/dt

T_J= 125 °C, linear to 0.67 V_DRM

1000

V/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Junction operating and storage

temperature range

T_J, T_Stg

-40 to +125

°C

Maximum internal thermal resistance,

junction to case per leg

R_thJC

R_thCS

DC operation

0.29

0.1

°C/W

Typical thermal resistance,

case to heatsink per module

Mounting surface flat, smooth and greased

A mounting compound is recommended and the

torque should be rechecked after a period of

3 hours to allow for the spread of the compound.

to heatsink

busbar

Mounting torque 10 %

Approximate weight

Case style

2.7

oz.

JEDEC^®

AAP Gen 7 (TO-240AA)

R CONDUCTION PER JUNCTION

SINE HALF WAVE CONDUCTION

RECTANGULAR WAVE CONDUCTION

DEVICES

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

VSK.71..

0.052

0.062

0.079

0.116

0.197

0.037

0.064

0.085

0.121

0.200

°C/W

Note

•

Table shows the increment of thermal resistance R_thJCwhen devices operate at different conduction angles than DC

Revision: 26-Jul-2018

Document Number: 94631

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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