Datasheet > VS-VSKT71/10

VS-VSKT71/10

更新时间： 2022-09-29 19:43:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	320K
描述
MODULE THYRISTOR 75A ADD-A-PAK

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VS-VSKT71/10 数据手册

VS-VSKT71.., VS-VSKH71.., VS-VSKL71.., VS-VSKN71.. Series

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Vishay Semiconductors

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V_RRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

_RSM, MAXIMUM

V_DRM, MAXIMUM REPETITIVE

_RRM,I_DRM

VOLTAGE

TYPE NUMBER

CODE

NON-REPETITIVE PEAK

PEAK OFF-STATE VOLTAGE,

AT 125 °C

REVERSE VOLTAGE

GATE OPEN CIRCUIT

400

600

500

700

400

600

800

900

800

VS-VSK.71

1000

1200

1400

1600

1100

1300

1500

1700

1000

1200

1400

1600

ON-STATE CONDUCTION

PARAMETER

SYMBOL

I_T(AV)

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current (thyristors)

Maximum average forward current (diodes)

180° conduction, half sine wave,

T_C= 85 °C

I_F(AV)

Maximum continuous RMS on-state current,

as AC switch

I_O(RMS)

165

I_(RMS)

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

1300

1360

1093

1140

8.45

7.68

5.97

5.45

No voltage

reapplied

I_TSM

I_FSM

Sinusoidal

half wave,

initial T_J= T_Jmaximum

Maximum peak, one-cycle non-repetitive

on-state or forward current

100 % V_RRM

reapplied



No voltage

reapplied

Maximum I²t for fusing

I²t

Initial T_J= T_Jmaximum

kA²s

100 % V_RRM

reapplied

t = 0.1 ms to 10 ms, no voltage reapplied 

T_J= T_Jmaximum

Maximum I²t for fusing

I²t ⁽¹⁾

84.5

kA²s

Low level ⁽³⁾

0.96

1.08

3.28

2.86

(2)

Maximum value or threshold voltage

V_T(TO)

T_J= T_Jmaximum

High level ⁽⁴⁾

Low level ⁽³⁾

Maximum value of on-state 

slope resistance

(2)

r_t

T_J= T_Jmaximum

m

High level ⁽⁴⁾

V_TM

V_FM

I_TM=  x I_T(AV)

T_J= 25 °C

Maximum peak on-state or forward voltage

1.72

150

I_FM=  x I_F(AV)

Maximum non-repetitive rate of rise of

turned on current

T_J= 25 °C, from 0.67 V_DRM,

I_TM=  x I_T(AV), I_g= 500 mA, t_r< 0.5 μs, t_p> 6 μs

dI/dt

A/μs

T_J= 25 °C, anode supply = 6 V,

resistive load, gate open circuit

Maximum holding current

Maximum latching current

I_H

I_L

250

400

T_J= 25 °C, anode supply = 6 V, resistive load

Notes

(1)

(2)

(3)

(4)

I²t for time t_x= I²t x t_x

Average power = V_T(TO)x I_T(AV)+ r_tx (I_T(RMS)

16.7 % x  x I_AV< I <  x I_AV

)

I >  x I_AV



Revision: 26-Jul-2018

Document Number: 94631

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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